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Remarkably improved uniform bipolar-resistive switching performance with a NiO buffer layer in Bi2SiO5 thin-film memory devices

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Abstract

Orthorhombic Bi2SiO5 thin films were fabricated on Pt/Ti/SiO2/Si substrates by incorporating a NiO thin layer between Bi2SiO5 and bottom electrode. Compared with those bare Pt/Bi2SiO5/Pt devices, a remarkably improved uniformity of resistive switching parameters such as electroforming voltages, reset voltages, and a resistance ratio of low/high states was demonstrated in the Bi2SiO5 devices with an embedded NiO layer. This improvement was attributed to the formation of the partial conductive filaments resulted from sufficient oxygen vacancies at the interface. Our results provide a method for the optimization of the operation voltage control toward forefront applications in nonvolatile memory.

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Acknowledgements

The authors gratefully acknowledge financial support from National Natural Science Foundation of China (Nos. 51872335, 51372281) and Natural Science Foundation of Guangdong Province, China (No. 2015A030311019).

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Authors and Affiliations

  1. Center of Experimental Teaching for Common Basic Courses, South China Agricultural University, Guangzhou, 510642, China

    Ruqi Chen

  2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou, 510275, China

    Ruqi Chen, Aize Hao & Dinghua Bao

  3. Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing, 400044, China

    Wei Hu

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  1. Ruqi Chen
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Correspondence to Ruqi Chen or Dinghua Bao.

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Chen, R., Hu, W., Hao, A. et al. Remarkably improved uniform bipolar-resistive switching performance with a NiO buffer layer in Bi2SiO5 thin-film memory devices. J Mater Sci: Mater Electron 30, 21477–21484 (2019). https://doi.org/10.1007/s10854-019-02530-3

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