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Recovery process for trimethyl-indium (TMIn) precursor used in compound semiconductors such as InGaN

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Abstract

TMIn is used as a metal organic precursor for MOCVD to grow InGaN or InN, which form the basis of solar cells or green LEDs. However, TMIn has a residual amount of about 10% in a used TMIn canister. This study aims to recover the residual amount of TMIn and to re-use it as a precursor after purification. Analysis of the inorganic impurities after refining TMIn shows that the total impurity is lower than 530 μg/L by ICP-AES. In the FT-NMR of detective organic chemical bonding of “(CH3)3In” peak is observed with no defective organic structure of bonding. In addition, InGaN MQW was deposited using refined TMIn and characterization was carried out. The structural and optical properties of the MQW analyzed by XRD and TEM were very similar to the reference MQW.

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Authors and Affiliations

  1. Division of Earth and Environmental Science, Korea Basic Science Institute, 162, Yeongudanji-ro, Ocahng-eup, Cheongwon-gu, Cheongju-si, 28119, Korea

    Jaeyeol Yang & Jaesik Yoon

  2. Major of Metallurgical System Engineering, Chonbuk National University, 567, Baekje-daero, Deokjin-gu, Jeonju-si, 54896, Korea

    Jaewon Lim

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  1. Jaeyeol Yang
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  2. Jaewon Lim
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  3. Jaesik Yoon
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Correspondence to Jaesik Yoon.

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Yang, J., Lim, J. & Yoon, J. Recovery process for trimethyl-indium (TMIn) precursor used in compound semiconductors such as InGaN. J Mater Sci: Mater Electron 30, 19444–19449 (2019). https://doi.org/10.1007/s10854-019-02307-8

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  • DOI: https://doi.org/10.1007/s10854-019-02307-8

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