Abstract
In the present investigation nanocrystalline mixed metal chalcogenide (MMC) MoBiGaSe5 thin films were successfully deposited by vacuum evaporation technique. The asdeposited and vacuum annealed MoBiGaSe5 thin films were studied for their optical, structural, morphological, compositional, electrical and photoelectrochemical (PEC) performance. Optical absorption studies revealed that asdeposited and vacuum annealed MoBiGaSe5 thin films showed absorption in the visible region. X-ray analysis of vacuum annealed film shows the phase transition from orthorhombic Bi2Se3 to stoichiometric hexagonal Bi2Se3 phase. The phase transition confirms the formation of hexagonal nanocrystalline MoBiGaSe5 pure phase. SEM images of the asdeposited film showed uniform well defined morphology, besides annealed sample, had diffused granular growth of uniform spheres. HRTEM images showed an average particle size 58 nm, and SAED pattern confirms the single crystalline hexagonal structure of MoBiGaSe5 thin films. EDS confirmed the presence of Mo, Bi, Ga and Se elements and XPS confirms Mo4+, Bi3+, Ga3+ and Se2− oxidation states. The AFM images were in good agreement with SEM images. Asdeposited and annealed MoBiGaSe5 thin film show semiconducting behavior with p-type conductivity. The PEC performance was studied, and it showed efficiency (ɳ) 0.004 and 0.097% of asdeposited and vacuum annealed MoBiGaSe5 thin films respectively.
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Acknowledgements
One of the authors, S. V. Patil would like to thank DST for the availability of instruments purchased under DST-FIST programme at Chandmal Tarachand Bora College, Shirur file no. SR/FST/College - 068/2017.
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Patil, S.V., Ghanwat, V.B., Mandhare, R.Y. et al. Photoelectrochemical performance of MoBiGaSe5 thin films deposited by vacuum deposition technique. J Mater Sci: Mater Electron 30, 17612–17622 (2019). https://doi.org/10.1007/s10854-019-02110-5
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DOI: https://doi.org/10.1007/s10854-019-02110-5