Abstract
In this paper, the water droplet experimental method was used to in situ study the electrochemical migration and related behaviors of Sn-based lead-free solder. Results showed that the electrochemical migration short-circuit time decreased with voltage increasing. Electrochemical migration was difficult to occur when the voltage was less than 1.5 V. However, when the voltage was above 5 V, metal deposits were generated in a short time and caused a bridge between two electrodes, which led to short circuit. As spacing increased, the short-circuit time prolonged. The three-dimensional pattern between voltage, spacing and short-circuit time had been constructed, which is beneficial to estimate the short-circuit time value under a combination of any voltage and spacing within a certain range. When changed the concentration of NaCl solution, it was founded that dendrites which surface covered much precipitates were formed at a low concentration. At medium concentration, there was no dendrites but only formed a large amount of precipitates. At a high concentration, the dendrites which surface with less precipitates were showed again. The formation mechanisms of dendrites under different NaCl solution concentrations were analyzed. In addition, the effects of different materials on electrochemical migration behavior were also studied, founding that electrochemical migration products of Sn, Sn0.7Cu and Sn3Ag were mainly Sn and Sn oxides. The electrochemical migration products of Sn9Zn contain much Zn element apart from Sn and Sn oxides. At a lower voltage, Sn9Zn solder had better electrochemical migration resistance than Sn, Sn0.7Cu and Sn3Ag, but this phenomenon was not obvious at a higher voltage.
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This work was supported by the National Natural Science Foundation of China (Grant Nos: 51871040 and 51571049).
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Qi, X., Ma, H., Wang, C. et al. Electrochemical migration behavior of Sn-based lead-free solder. J Mater Sci: Mater Electron 30, 14695–14702 (2019). https://doi.org/10.1007/s10854-019-01841-9
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DOI: https://doi.org/10.1007/s10854-019-01841-9