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Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory

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Abstract

The novel amorphous strontium oxide (α-SrO) resistive random access memory (RRAM) device based on the ITO/α-SrO/Pt sandwich-like structure was presented. Photosensitivity to ultraviolet (UV) light for α-SrO based RRAM was investigated. The resistive switching characteristics were affected through the modification of the number of oxygen vacancy by the UV irradiation. Ultraviolet light-assisted oxygen vacancy manipulation in the SrO film is an effect method to adjust device resistive switching behavior. The current conduction mechanism of the SrO-based RRAM device was changed from the Schottky emission mechanism to Poole-Frankel mechanism after the UV light illumination. In order to unveil the stability of the SrO samples after the UV light illumination, the physical models for different switching processes were proposed. Additionally, the improved switching uniformity via UV light irradiation gives physical insight into designing resistive memory devices.

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Acknowledgements

This work was financially supported by the Fundamental Research Funds for the Central Universities (No. 3102018gxc017) and the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2018JM5059).

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Authors and Affiliations

  1. State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment, Shenzhen, 518172, Guangdong, People’s Republic of China

    Tingting Tan & Yihang Du

  2. MIIT Key Laboratory of Radiation Detection Materials and Devices, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, 710072, People’s Republic of China

    Tingting Tan, Yihang Du, Yaling Sun, Hua Zhang, Ai Cao & Gangqiang Zha

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  1. Tingting Tan
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  2. Yihang Du
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  3. Yaling Sun
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Correspondence to Tingting Tan or Gangqiang Zha.

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Tan, T., Du, Y., Sun, Y. et al. Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory. J Mater Sci: Mater Electron 30, 13445–13453 (2019). https://doi.org/10.1007/s10854-019-01712-3

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