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Structural, optical and Schottky diode properties of Cu2ZnSnS4 thin films grown by two-stage method

Journal of Materials Science: Materials in Electronics volume 30, pages 10435–10442 (2019)Cite this article

Abstract

CZTS thin film was prepared by a two-stage process comprising sputter deposition of metallic Cu, Zn, and Sn layers followed annealing treatment of the metallic precursors in a sulfur atmosphere at 560 °C for 3 min. The CZTS thin film was investigated in the way of structural, optical and electrical properties. The XRD pattern of Cu-poor and Zn-rich CZTS thin film was dominated by characteristic peaks of kesterite CZTS planes. Raman spectra of the film ensured formation of kesterite CZTS phase and displayed formation of CTS and ZnS phases. Dense and polycrystalline surface features were observed in SEM images of CZTS thin film. Band–band transitions was not observed due to the probable concentration of deep acceptor levels in this material. The diode parameters of Mo/CZTS/Al structure such as ideality factor, barrier height and serial resistance were calculated employing temperature dependent I–V characteristics of Mo/CZTS/Al diode structure.

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Authors and Affiliations

  1. Department of Opticianry, Nigde Ömer Halisdemir University, Nigde, Turkey

    Y. Atasoy

  2. Nanotechnology Application and Research Center, Nigde Omer Halisdemir University, Nigde, Turkey

    Y. Atasoy & M. A. Olgar

  3. Department of Physics, Nigde Omer Halisdemir University, Merkez, 51240, Nigde, Turkey

    M. A. Olgar

  4. Department of Physics, Faculty of Sciences, Karadeniz Technical University, 61080, Trabzon, Turkey

    E. Bacaksiz

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  1. Y. Atasoy
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  2. M. A. Olgar
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  3. E. Bacaksiz
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Correspondence to Y. Atasoy.

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Atasoy, Y., Olgar, M.A. & Bacaksiz, E. Structural, optical and Schottky diode properties of Cu2ZnSnS4 thin films grown by two-stage method. J Mater Sci: Mater Electron 30, 10435–10442 (2019). https://doi.org/10.1007/s10854-019-01385-y

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  • DOI: https://doi.org/10.1007/s10854-019-01385-y