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A novel method for source/drain ion implantation for 20 nm FinFETs and beyond

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Abstract

This paper presents a method to improve source/drain extension (SDE) ion implantation (I/I) process for sub-20 nm node FinFETs with no extra step in transistor process. Traditionally, SDE I/I process needs a large implant tilt angle and a high dose to obtain a heavy and conformal doping. However, this process leads to implantation shadow effects and Si-fin amorphization. These drawbacks can be removed in our new approach when SDE I/I is modified and moved after S/D epitaxy process (SDE I/I-last). Because of the facet planes of the SiGe layer, the ions are allowed to be implanted with small tilt. This is helpful to avoid shadow effects of implantation and to keep the low defect density in the S/D. As a result, the external resistance (REXTRNL) is not high and the strain relaxation is minor in S/D epitaxy layer. Finally, p-type FinFETs with 25 nm gate length with SDE I/I-last are fabricated. These new FinFETs demonstrate ~ 50% on-state current (ION) improvement compared to those transistors fabricated by traditional method.

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Acknowledgements

This work was financially supported by the National Key Research and Development Program of China (2016YFA0301701), and the Youth Innovation Promotion Association of CAS under Grant No 2016112, which are acknowledged.

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Authors and Affiliations

  1. Key laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People’s Republic of China

    Changliang Qin, Huaxiang Yin, Guilei Wang, Yanbo Zhang, Jinbiao Liu, Qinzhu Zhang, Huilong Zhu, Chao Zhao & Henry H. Radamson

  2. University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100049, People’s Republic of China

    Changliang Qin, Huaxiang Yin, Guilei Wang, Huilong Zhu, Chao Zhao & Henry H. Radamson

  3. Department of Electronics Design, Mid Sweden University, Holmgatan 10, 85170, Sundsvall, Sweden

    Henry H. Radamson

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  1. Changliang Qin
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  2. Huaxiang Yin
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  4. Yanbo Zhang
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  9. Henry H. Radamson
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Correspondence to Huaxiang Yin or Guilei Wang.

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Qin, C., Yin, H., Wang, G. et al. A novel method for source/drain ion implantation for 20 nm FinFETs and beyond. J Mater Sci: Mater Electron 31, 98–104 (2020). https://doi.org/10.1007/s10854-019-01274-4

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  • DOI: https://doi.org/10.1007/s10854-019-01274-4

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