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Effect of Ce doping on crystalline orientation, microstructure, dielectric and ferroelectric properties of (100)-oriented PCZT thin films via sol–gel method

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Abstract

Pb1.2−xCexZr0.52Ti0.48O3 (PCZT, x = 0%, 0.1%, 0.5%, 1%, 2% and 3%) thin films with the thickness of about 1 µm were fabricated by sol–gel process and traditional annealing process on Pt/Ti/SiO2/Si substrates to investigate the effect of cerium doping on crystalline orientation, microstructure and electric properties of the samples. (100)-oriented Pb1.2−xCexZr0.52Ti0.48O3 films were obtained for all x values. The results of Scanning electron microscopy (SEM) revealed that the 0%, 0.1%, 0.5%, and 1% cerium doped Pb1.2−xCexZr0.52Ti0.48O3 films have a dense columnar perovskite structure. The maximum dielectric constant and remnant polarization were obtained for 0.1% Ce-doped film.

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Acknowledgements

This paper was supported by National Natural Science Foundation of China (No. 51775088).

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Authors and Affiliations

  1. Key Laboratory for Micro/Nano Technology and Systems of Liaoning Province, Dalian University of Technology, Dalian, 116024, People’s Republic of China

    Fuan Wang, Xing Wang, Da Chen, Qiusen Wang, Jiao Dou, Qi Li & Helin Zou

  2. College of Physics Science and Technology, Dalian University, Dalian, 116622, China

    Jiangang Zhou

  3. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian, 116024, People’s Republic of China

    Helin Zou

Authors
  1. Fuan Wang
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  2. Jiangang Zhou
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  3. Xing Wang
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Correspondence to Helin Zou.

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Wang, F., Zhou, J., Wang, X. et al. Effect of Ce doping on crystalline orientation, microstructure, dielectric and ferroelectric properties of (100)-oriented PCZT thin films via sol–gel method. J Mater Sci: Mater Electron 29, 18668–18673 (2018). https://doi.org/10.1007/s10854-018-9989-9

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  • DOI: https://doi.org/10.1007/s10854-018-9989-9

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