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Effect of IrO2/Pt, IrO2, and Pt bottom electrodes on the structure and electrical properties of PZT based piezoelectric microelectromechanical system devices

  • D. M. Potrepka
  • M. Rivas
  • H. Yu
  • M. Aindow
  • G. R. Fox
  • R. G. Polcawich
Article
  • 68 Downloads

Abstract

In piezoelectric microelectromechanical system devices with PbZr x Ti1−xO3 as the ferroelectric, the bottom electrode can provide a template for oriented PbZr x Ti1−xO3 growth. IrO2/Pt, IrO2, and Pt bottom electrode layers were sputter deposited onto TiO2 and were used as growth templates for oriented PbZr0.52Ti0.48O3 growth. The IrO2 and Pt were found to be {100}- and {111}-oriented, respectively, by X-ray diffraction. Scanning/transmission electron microscopy results indicate that the bottom electrodes are textured; however, the PbZr0.52Ti0.48O3 layer is partially textured. The impact of the bottom electrode type on the electrical properties is investigated by dielectric, ferroelectric, and piezoelectric measurements on circular capacitors formed on blanket PbZr0.52Ti0.48O3 films and unimorph cantilevers. For devices with PbZr0.52Ti0.48O3 on IrO2/Pt bottom electrodes, values for the dielectric constant of 1103 ± 28, loss tangent of 0.070 ± 0.004, maximum polarization of 0.399 ± 0.003 C/m2 at 38 MV/m, and leakage current of 5.4 ± 5.8 nA at 20 MV/m were obtained. Values of normalized strain of 0.0030 ± 0.0001 at 20 MV/m, and effective piezoelectric coefficient, d31,f, of 100 ± 25 pm/V at 15 MV/m were obtained on cantilever unimorphs with electrode area 16 µm × 123 µm and PZT area 16 µm × 125 µm. These values are comparable to results obtained for PbZr0.52Ti0.48O3 on 100 nm thick Pt-only bottom electrodes.

Notes

Acknowledgements

The authors gratefully acknowledge Steven K. Isaacson and Joel L. Martin for process support, Brian K. Power for device fabrication support, and Ryan Q. Rudy for assistance with measurement analyses. The microscopy studies described in this paper were performed using the facilities in the UConn/Thermo Fisher Scientific Center for Advanced Microscopy and Materials Analysis (CAMMA) and were supported in part by a research grant from Thermo Fisher Scientific Company. Funding for this work was provided by US Army contract numbers W911NF-15-2-0118 and W911NF-11-2-0053. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a nonexclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes. DoD will provide public access to these results of federally sponsored research in accordance with the DoD Public Access Plan (http://www.dtic.mil/dtic/pdf/dod_public_access_plan_feb2015.pdf).

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Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary material

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Supplementary material 1 (DOCX 7097 KB)

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Copyright information

© This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2018

Authors and Affiliations

  • D. M. Potrepka
    • 1
  • M. Rivas
    • 2
  • H. Yu
    • 2
  • M. Aindow
    • 2
  • G. R. Fox
    • 3
  • R. G. Polcawich
    • 1
  1. 1.Sensors and Electron Devices Directorate, U.S. Army Research LaboratoryAdelphiUSA
  2. 2.Department of Materials Science and Engineering, Institute of Materials ScienceUniversity of ConnecticutStorrsUSA
  3. 3.Fox Materials ConsultingLLCColorado SpringsUSA

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