Parameter extraction of gate tunneling current in metal–insulator–semiconductor capacitors based on ultra-thin atomic-layer deposited Al₂O₃

Abstract

Metal–insulator–semiconductor devices were fabricated using ultra-thin (6 nm) atomic layer deposited Al₂O₃. From Ig–Vg measurements, it was determined that the main conduction mechanisms for these devices are Ohmic conduction at very low electric fields (E < 2 MV cm⁻¹) followed by Poole–Frenkel emission at medium electric fields (E > 2 MV cm⁻¹) and finally, just before breakdown, Fowler–Nordheim (E > 5 MV cm⁻¹). From the accurate verification of these conduction mechanisms, physical parameters such as barrier height (Φ_B), effective mass (m*) and energy trap level (Φ_T) are extracted and could be used to effectively understand the performance and reliability of these devices under different substrate injection conditions.