Influence of substrate and Ar/N2 gas flow ratio on structural, optical and electrical properties of TiN thin films synthetized by DC magnetron sputtering

  • Peng Gu
  • Xinghua Zhu
  • Jitao Li
  • Haihua Wu
  • Dingyu Yang


Titanium nitride (TiN) thin films have been prepared by direct-current reaction magnetron sputtering technique on different substrates (glass and Si) and the influence of substrate and Ar/N2 gas flow ratio on structural, optical and electrical properties of TiN thin films were discussed. X-ray diffraction suggested that with the ratio of Ar/N2 decreasing, the diffraction intensity of (111) plane gradually diminished while (200) plane increased and films on Si substrate exhibited better crystalline quality than glass substrate. Improvement of Ar/N2 ratio is contribute to enhance the deposition rate and the obvious surface roughness were observed when the ratio up to 49. Photoluminescence spectra showed that TiN films on Si substrate showed higher intrinsic emission and lower defect emission. Moreover, the resistivity of TiN films showed obviously decreasing as the flow rate ratio of Ar/N2 increased, especially films on Si substrate.



This work was supported by Natural Science Foundation of China (NSFC) No. 11675029 and Sichuan Province Science and Technology Program No. 2015GZ0194 and No. 2016FZ0018.

Compliance with ethical standards

Conflict of interest

The authors declared that they have no conflicts of interest to this work.


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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Peng Gu
    • 1
  • Xinghua Zhu
    • 1
    • 2
  • Jitao Li
    • 1
  • Haihua Wu
    • 1
  • Dingyu Yang
    • 1
  1. 1.College of Optoelectronic TechnologyChengdu University of Information TechnologyChengduPeople’s Republic of China
  2. 2.College of Intelligent ManufacturingSichuan University of Arts and ScienceDazhouPeople’s Republic of China

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