Vanadium doping for lowering the preparation temperatures of CaCu3Ti4O12 ceramics and its effect on their microstructures and dielectric properties
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Because of their colossal dielectric constant, CaCu3Ti4O12 ceramics have promising applications for cofired multilayer ceramic capacitors. However, their preparation temperature is still too high for such type of applications. This work demonstrates that V2O5 doping can considerably lower the calcination and sintering temperatures of CaCu3Ti4O12 ceramics. Herein, the CaCu3Ti4O12 ceramics, partially substituted by V5+ for Ti4+ with a molecular formula of CaCu3Ti4−xVxO12 (x = 0, 0.01, 0.03, 0.05), were prepared by the solid state reaction method using V2O5 as the doping substance. It has been shown that V2O5 can considerably lower the calcination and sintering temperatures to 870 and 950 °C, respectively. The dielectric constant of the low temperature prepared CaCu3Ti4−xVxO12 ceramics is much larger than the undoped CaCu3Ti4O12. This work provides a preliminary step for possible commercial applications of CaCu3Ti4O12 ceramics for cofired multilayer ceramic capacitors.
This work was supported by the Doctoral Scientific Research Foundation (No. 8100200256) and the Natural Science Research Program (No. 16ZRYB10) of Jiangxi University of Technology.
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