Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer
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N-polar GaN-based blue-green light-emitting diodes (LEDs) with p-AlGaN electron blocking layer (EBL) were numerically investigated by simulation and experimentally grown on vicinal C-face SiC substrates by metal–organic chemical vapor deposition. By numerical simulation, we can find that p-AlGaN EBL in N-polar LEDs is able to play a more important role in blocking electron overflow than that in Ga-polar LEDs due to the reversed polarization, which leads to a high output power and internal quantum efficiency. Besides, the holes injection efficiency is enhanced in N-polar LED, resulting in a lower turn-on voltage. In experimental studies, N-polar LEDs based on different numbers of quantum wells were grown on vicinal C-face n-SiC substrates. When a forward bias is applied to the epitaxial N-polar LED with two quantum wells, a strong blue-green emission located at 480 nm can be observed. This work indicates that N-polar group-III nitrides have great potential in the application of optoelectronic devices.
This work was supported by the National Key Research and Development Program (No. 2016YFB0400103), the National Natural Science Foundation of China (Nos. 61674068 and 61734001), the Science and Technology Developing Project of Jilin Province (20150519004JH, 20160101309JC, and 20170204045GX).
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