Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis
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Cu(In1 − xGax)Se2 (CIGS) thin films with x = 0 (CIS) and x = 0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 °C, followed by selenization treatment at 550 °C in selenium environment under N2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x = 0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGS absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.
Authors wish to thank Adolfo Tavira Fuentes (XRD measurements), Norma Iris (thermal evaporation of Ag), Miguel Galván A (Electrical measurements) from Department of solid state electronics of Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN) for their technical assistance. Our special thanks to Dr. Orlando Zelaya from Department of Physics of CINVESTAV-IPN for providing tubular furnace facilities. B. J. Babu is thankful to Consejo Nacional de Ciencia y Tecnologia (CONACyT) for their continuous financial support to pursue Ph. D in Mexico and for providing Beca-Mixta scholarship to do 3 months project work at Colorado School of Mines.
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