Facile fabrication of In:Ge/Cu nano-octahedra film for improving photoelectrochemical properties
The novel In:Ge/Cu nano-octahedra photoelectric film, a kind of metal-semiconductor-metal (MSM) like structures, was prepared from by a facile two-step electrodeposition process, which In:Ge and Cu nano-octahedra were successively deposited on the indium tin oxide (ITO) substrates from aqueous solution. With the modification of Cu nano-octahedral, the photoresponse and photoactive current of the In:Ge films has significantly improved 88 flods under illuminations (wavelength range: 365, 532 and 805 nm). Notably, the In:Ge/Cu nano-octahedra films exhibit excellent photoelectrochemical properties in wide wavelength range from the UV to near-infrared. This novel photoelectric film shows great potential applications in optoelectronic devices and photodetectors, and the facilely synthesis route can provide an enlightening insight for the fabrication of photoelectric devices and high-performance energy conversion systems.
The authors gratefully acknowledge the Science Fund from the National Natural Science Foundation of China (No. 21375048).