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Fabrication and characterization of n-ZnO/p-GaAs structure

  • G. Turgut
  • F. S. Kaya
  • S. Duman
Article
  • 57 Downloads

Abstract

In this investigation, n-ZnO/p-GaAs structure is prepared by a sol–gel route. ZnO film has wurtzite structure with (101) preferential direction. The nano-sized particles are homogeneously dispersed on the film surface. The root mean square roughness and optical band gap values are determined to be 11.49 nm and 3.272 eV. The electrical study shows that n-ZnO/p-GaAs structure has a rectifying property under the dark. The ideality factor and barrier height of structure are defined to be 1.52 and 0.92 eV, respectively. As a result of present work, n-ZnO/p-GaAs structure can be used in a variety of electronic applications.

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© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Basic Sciences, Science FacultyErzurum Technical UniversityErzurumTurkey
  2. 2.Department of Physics, Science FacultyAtaturk UniversityErzurumTurkey

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