Dielectrical performance of high-k yttrium copper titanate thin films for electronic applications
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The increasing constraints in the miniaturization of modern electronic devices is driving the search for new high-k dielectric materials. Rare-earth transition metal oxides are very interesting because of the large values of dielectric constant observed in bulk samples. Here, we report on a comparison among the dielectric properties of yttrium copper titanate (YCTO) thin films and those of commonly used dielectrics such as SiO2 and MgO, grown in similar device structures. The YCTO permittivity was found to depend strongly on the oxygen pressure during deposition and can reach values even higher than those reported in bulk YCTO with good performances in terms of losses.
This work was financially supported by the Italian Ministry of Foreign Affairs and the Department of Science and Technology, Government of India through the high-relevance project “Spintronic devices for mass-scale electronics” within the program for scientific and technological co-operation between Italy and India. This work was also financially supported by the MIUR-PRIN Project (prot.2012EFSHK4) and Regione Puglia NABIDIT – NANOBIOTECNOLOGIE e SVILUPPO PER TERAPIE INNOVATIVE Project (F31D08000050007). Zoobia Ameer also wants to acknowledge HEC SRGP Project (No. 21–1004/SRGP/R&D/HEC/2016) for the partial financial support.
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