Highly stable Si-N-doped BaMgAl₁₀O₁₇:Eu phosphor prepared by EuSi₂O₂N₂ incorporation: structure and luminescence properties

Abstract

Partial replacement of some Al–O pairs in BaMgAl₁₀O₁₇:Eu²⁺ (BAM:Eu) phosphor with Si–N pairs has been proven to be one potential way to achieve products with high thermal stability. However, in most situations, the effect of Si–N incorporation is unsatisfactory because of the poor reactivity of the Si₃N₄ used as the raw material. Herein, a Si–N-doped BaMgAl₁₀O₁₇:Eu²⁺ (BAM:Eu) phosphor has been successfully prepared by using EuSi₂O₂N₂ as a raw material; the strong covalent bonds of Eu–N and Si–N in EuSi₂O₂N₂ are beneficial for Si–N incorporation and the coordination of Eu with nitrogen in the BAM structure. The effects of EuSi₂O₂N₂ incorporation on the structure and luminescence properties of the resulting phosphors were investigated. The Si–N doped BAM:Eu phosphor shows a crystal lattice shrinkage, and the interaction between Eu²⁺ and the coordination environment is improved. The N³⁻ coordination with Eu²⁺ also shifts the emission wavelength of the BAM:Eu phosphor to longer wavelengths. Moreover, the Si–N incorporation improves the thermal quenching property and the thermal stability of the resulting BAM:Eu product by modifying the local structure.