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Crystal structure, microstructure and microwave dielectric properties of novel MgAl2Ti3O10 ceramic

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Abstract

In the present work, a novel MgAl2Ti3O10 ceramic was obtained using a traditional solid-state reaction method. X-ray diffraction and energy dispersive spectrometer showed that the main MgAl2Ti3O10 phase was formed after sintered at 1300–1450 °C. With rising the sintering temperature from 1300 to 1450 °C, the bulk density (ρ), relative permittivity (ε r ) and Q × f value firstly increased, reached the maximum values (3.61 g/cm3, 14.9, and 26,450 GHz) and then decreased. The temperature coefficient of resonator frequency (τ f ) showed a slight change at a negative range of − 94.6 to − 83.7 ppm/°C. When the sintering temperature was 1400 °C, MgAl2Ti3O10 ceramics exhibited the best microwave dielectric properties with Q × f = 26,450 GHz, ε r  = 14.9 and τ f  = − 83.7 ppm/°C.

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Acknowledgements

This work was supported by Natural Science Foundation of China (Nos. 11464009, 61761015, 11664008 and 11364012), Natural Science Foundation of Guangxi (Nos. 2017GXNSFDA198027, 2015GXNSFDA139033 and 2017GXNSFFA198011).

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Authors and Affiliations

  1. Guangxi Ministry-Province Jointly-Constructed Cultivation Base for State Key Laboratory of Processing for Non-ferrous Metal and Featured Materials, Guangxi Key Laboratory in Universities of Clean Metallurgy and Comprehensive Utilization for Non-ferrous Metals Resources, Collaborative Innovation Center for Exploration of Hidden Nonferrous Metal Deposits and Development of New Materials in Guangxi, School of Materials Science and Engineering, Guilin University of Technology, Guilin, 541004, China

    Huanfu Zhou, Wendong Sun, Jin Huang, Kangguo Wang, Xiuli Chen, Xiaobin Liu & Hong Ruan

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  1. Huanfu Zhou
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  2. Wendong Sun
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  3. Jin Huang
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Correspondence to Huanfu Zhou.

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Zhou, H., Sun, W., Huang, J. et al. Crystal structure, microstructure and microwave dielectric properties of novel MgAl2Ti3O10 ceramic. J Mater Sci: Mater Electron 29, 6232–6235 (2018). https://doi.org/10.1007/s10854-018-8599-x

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  • DOI: https://doi.org/10.1007/s10854-018-8599-x

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