Abstract
A novel V2O5–ZnO–B2O3 (VZB) glass was introduced into the Li0.42Zn0.27Ti0.11Mn0.1Fe2.1O4 (LiZnTiMn) ferrites for advancing low-temperature cofired ceramics technology and fabricating microwave ferrite devices by the multilayer process. The results reveal that the addition of VZB glass is an effective way to improve the densification, microstructure, and ferrimagnetic properties of the LiZnTiMn ferrites. The relationship among dopant amount, sintering mechanism, and structural distribution characteristic was established, tailoring the foundation of ferrimagnetic performance of low-temperature fired LiZnTiMn composites. The resulting VZB glass as flux promotes the microstructural uniformity and compactness and also provides the optimized physical properties of low-temperature sintered LiZnTiMn composites. An appropriate amount of VZB glass (~0.5 wt%) could enhance the saturation magnetization (from 52.2 to 72.3 emu/g) and remanence ratio of saturation induction (from 0.76 to 0.85) and reduce the coercivity of magnetic induction intensity (from 685 to 199 A/m) of the ferrite composites sintered at ~900 °C. Moreover, the ferromagnetic resonance linewidth of LiZnTiMn composites doped with 0.5 wt% VZB glass decreased from 860 to 195 Oe because of the combined effect of good uniformity and low porosity. Thus, with a low-temperature sintering process, the VZB glass could be a promising additive for achieving low-loss LiZnTiMn ferrite used in microwave devices.
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Acknowledgements
This work was partly supported by the National Key Research and Development Plan under Grant No. 2017YFB0406300, the National Natural Science Foundation of China under Grant No. 51572041, the Technical Plan Projects of Sichuan Province under Grant Nos. 2016GZ0245, 2016GZ0261 and 2017HH0052, as well as by the International S&T Cooperation Program of China under Grant No. 2012DFR10730.
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Xie, F., Jia, L., Xu, F. et al. Low-firing Li0.42Zn0.27Ti0.11Mn0.1Fe2.1O4 ceramics modified with V2O5–ZnO–B2O3 glass addition for microwave device application. J Mater Sci: Mater Electron 29, 5885–5892 (2018). https://doi.org/10.1007/s10854-018-8561-y
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DOI: https://doi.org/10.1007/s10854-018-8561-y