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Gallium and indium co-doped ZnO as a transparent conducting oxide for Cu2SnS3 photodetectors

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Abstract

Ga and In co-doped ZnO (GIZO) thin films were grown by pulsed laser deposition for use as a transparent conducting oxide (TCO) in Cu2SnS3 (CTS) based photodetectors. The structural and optical properties were studied. The GIZO thin films were found exhibiting low resistivity of less than 10−3 Ω cm, and a high transparency of 97% both in visible and IR region. The performances of CTS photodetector with GIZO and with ZnO buffer assisted GIZO (ZnO/GIZO) as TCO layers were compared. The CTS photodetector with ZnO/GIZO as TCO was found to be exhibiting a higher photoresponse with responsivity, external quantum efficiency and specific detectivity of 552.3 A W−1, 1247.3% and 3.9 × 1012 Jones respectively. ZnO/GIZO could serve as an effective replacement for the commonly used TCO, indium tin oxide, which is expensive and non-earth abundant.

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Authors and Affiliations

  1. Materials Research Center, Indian Institute of Science, Bangalore, India

    Sandra Dias, Saraswathi Chirakkara, Nagabhushan Patel & S. B. Krupanidhi

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  1. Sandra Dias
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  2. Saraswathi Chirakkara
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  4. S. B. Krupanidhi
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Dias, S., Chirakkara, S., Patel, N. et al. Gallium and indium co-doped ZnO as a transparent conducting oxide for Cu2SnS3 photodetectors. J Mater Sci: Mater Electron 29, 2131–2139 (2018). https://doi.org/10.1007/s10854-017-8125-6

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  • DOI: https://doi.org/10.1007/s10854-017-8125-6

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