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Effects of annealing on Cu2ZnSnS4 thin films prepared on Mo substrate and the fabrication of solar cells

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Abstract

Cu2ZnSnS4 (CZTS) thin films on Mo substrate were obtained by a simple sol–gel process and subsequent sulfurization. To decrease the impact of the back contact to CZTS thin film solar cells, the pre-annealing and sulfurization process was controlled. Based on the sol–gel method, CZTS thin film solar cells with a structure of ZnO:Al/i-ZnO/CdS/CZTS/Mo/glass have been fabricated. The best power conversion efficiency (PCE) of CZTS solar cells was up to 4.28% under the optimized condition: the sulfurization temperature of 570 °C and CdS thickness of 50 nm.

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Acknowledgements

This work was supported primarily by National Natural Science Foundation of China (Grant Nos. 51572037, 51335002).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center for Photovolatic Science and Engineering, Changzhou University, Changzhou, 213164, Jiangsu, China

    Kezhi Zhang & Huafei Guo

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  1. Kezhi Zhang
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  2. Huafei Guo
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Correspondence to Kezhi Zhang.

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Zhang, K., Guo, H. Effects of annealing on Cu2ZnSnS4 thin films prepared on Mo substrate and the fabrication of solar cells. J Mater Sci: Mater Electron 28, 17044–17048 (2017). https://doi.org/10.1007/s10854-017-7629-4

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  • DOI: https://doi.org/10.1007/s10854-017-7629-4

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