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The structural and multiferroic properties of Bi(1−x)Ce x Fe(1−x)(Mg0.5Ti0.5) x O3 thin films

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Abstract

Bi(1−x)Ce x Fe(1−x)(Mg0.5Ti0.5) x O3 (x = 0, 0.05, 0.10, 0.20, 0.25) thin films were synthesized by a sol–gel method. The structural, electrical and magnetic properties of Bi(1−x)Ce x Fe(1−x)(Mg0.5Ti0.5) x O3 (x = 0, 0.05, 0.10, 0.20, 0.25) thin films have been investigated. BiFeO3 thin film possessed a perovskite-type rhombohedral structure with space group R3c, and the average grain size decreased as the concentration of Ce, Mg and Ti co-doping increased. The leakage current densities of BiFeO3 co-doping with Ce, Mg and Ti ions exhibited a significant reduction compared with that of BiFeO3 thin film. Compared with the leakage current density of BiFeO3 thin film (4.19 × 10−4 A/cm2), the leakage current density of Bi0.80Ce0.20Fe0.80Mg0.10Ti0.10O3 thin film was reduced by about four orders of magnitude (1.05 × 10−8 A/cm2) under the electric field of 300 kV/cm. Well-defined ferroelectric loops were obtained and the polarization increased with the increase of Ce, Ti and Mg co-doping. The remanent polarization of Bi0.80Ce0.20Fe0.80Mg0.10Ti0.10O3 thin film (2P r  ~34.9 μC/cm2) was approximately four times larger than that of pure BiFeO3 (2P r  ~7.8 μC/cm2) under the applied field of 300 kV/cm. The magnetization under 10 kOe magnetic field of Bi(1−x)Ce x Fe(1−x)(Mg0.5Ti0.5) x O3 thin films increased with the increasing concentration of Ce, Mg and Ti co-doping. The improvement of magnetic behaviors for BiFeO3 co-doping with Ce, Mg and Ti ions thin films were observed significantly, cooperating with the enhanced ferroelectricity which indicated that BiFeO3 co-doping with Ce, Mg and Ti ions thin films will be the promising materials in the application to magnetoelectric devices.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China under Grant Nos. 61176010 and 61172027, Guangdong Natural Science Foundation under Grant No. 2014A030311049, Science and Technology Planning Project of Guangdong Province under Grant No. 2017A010103035.

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Authors and Affiliations

  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering/School of Physics, Sun Yat-sen University, Guangzhou, 510275, China

    Xiaohang Wu, Yanchun Xie, Shenghong Yang & Yueli Zhang

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  1. Xiaohang Wu
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  2. Yanchun Xie
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Correspondence to Yueli Zhang.

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Wu, X., Xie, Y., Yang, S. et al. The structural and multiferroic properties of Bi(1−x)Ce x Fe(1−x)(Mg0.5Ti0.5) x O3 thin films. J Mater Sci: Mater Electron 28, 16895–16902 (2017). https://doi.org/10.1007/s10854-017-7608-9

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  • DOI: https://doi.org/10.1007/s10854-017-7608-9

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