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Large ferroelectric domain structures of epitaxial Bi2FeMnO6 thin films on Nb-doped SrTiO3 substrates

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Abstract

Epitaxial Bi2FeMnO6 (BFMO) thin films were deposited on Nb-dopedSrTiO3(Nb:STO) substrates via pulsed laser deposition. The 100-nm-thick BFMO thin films had a relatively high tetragonality with a high c/a ratio of 1.04, confirmed by X-ray diffraction. The BFMO thin film had low leakage currents and good ferroelectric properties along with an enhanced remanent polarization of about 25.0 μC/cm2. The BFMO thin films had large ferroelectric domain structures compared to conventional ferroelectric thin films, such as PbTiO3 thin films, which is due to their high domain wall energy.

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Acknowledgements

This work was supported by a Korea Research Foundation Grant under Contract No. 2015R1A2A2A05027951.

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Authors and Affiliations

  1. Department of Applied Physics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-Gu, Yongin, 446-701, Republic of Korea

    Hyun Wook Shin & Jong Yeog Son

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  1. Hyun Wook Shin
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  2. Jong Yeog Son
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Correspondence to Jong Yeog Son.

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Shin, H.W., Son, J.Y. Large ferroelectric domain structures of epitaxial Bi2FeMnO6 thin films on Nb-doped SrTiO3 substrates. J Mater Sci: Mater Electron 28, 15302–15305 (2017). https://doi.org/10.1007/s10854-017-7412-6

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  • DOI: https://doi.org/10.1007/s10854-017-7412-6

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