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Improving the operational voltage of vertical organic field effect transistor (VOFET) by altering the morphology of dielectric layer

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Abstract

This work aims at improving the performance of vertical organic field effect transistor (VOFET) by synthesizing the different morphology of dielectric layer; porous and non-porous to be used in the fabrication of 3-dimensional (3D) VOFET. In this work, poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] 75/25 have been used as a dielectric layer in the fabrication of 3D VOFET. To produce the 3D VOFET, porous alumina template is applied as to allow the replicating process between the template and P(VDF-TrFE) to occur. It is found that the replicating process has generated the porous structure of P(VDF-TrFE). Two types of VOFET, one with the integration of porous and one without the porous have been fabricated and characterized. VOFET without the porous has the current of 3.5 × 10−4 A obtained at drain-source voltage (VDS) of 25 V with the turn-on voltage of 10 V. Meanwhile, the VOFET integrated with porous recorded a better current of 2.0 × 10−3 A at VDS of 25 V with the turn-on voltage of 7 V.

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Acknowledgements

The authors would like to acknowledge the University of Malaya for the project funding under the University Malaya Research Grant (RP026C-15AFR) and the Ministry of Education Malaysia for the project funding under the Fundamental Research Grant Scheme (FP046-2015A).

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Authors and Affiliations

  1. Department of Physics, University of Malaya, 50603, Kuala Lumpur, Malaysia

    Muhammad Zharfan Mohd Halizan, Nur Adilah Roslan, Shahino Mah Abdullah & Nurain Abdul Halim

  2. International Institute of Advanced Islamic Studies, Jalan Ilmu, Off Jalan Universiti, 59100, Kuala Lumpur, Malaysia

    Shahino Mah Abdullah

  3. Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603, Kuala Lumpur, Malaysia

    Thamil Selvi Velayutham, Kai Lin Woon & Azzuliani Supangat

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  1. Muhammad Zharfan Mohd Halizan
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Correspondence to Azzuliani Supangat.

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Mohd Halizan, M.Z., Roslan, N.A., Abdullah, S.M. et al. Improving the operational voltage of vertical organic field effect transistor (VOFET) by altering the morphology of dielectric layer. J Mater Sci: Mater Electron 28, 11961–11968 (2017). https://doi.org/10.1007/s10854-017-7005-4

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