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Unipolar nonvolatile memory devices based on the composites of poly(9-vinylcarbazole) and zinc oxide nanoparticles

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Abstract

The application of poly(9-vinylcarbazole) (PVK) to make a composite with zinc oxide (ZnO) as the active layer has been reported. Unipolar resistive switching behaviors were observed from ITO/PVK + ZnO/Al memory devices. The reset voltages were higher than the set voltages. These devices present a low resistance state (LRS)/high resistance state (HRS) current ratio of 104 when read at −0.5 V, retaining the information for a time of 105 s. The bistable resistive switching behaviors were entirely steady within 104 cycles. The fitted results of I–V curves shown that the dominant conduction mechanisms in LRS and HRS were Ohmic conductive behavior and space-charge-limited current mechanism, respectively.

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Acknowledgements

This work is supported by the National Natural Science Foundation of China (NSFC, 61377085, 11574061, 61405043), Natural Science Foundation of Heilongjiang Province (F201338), the 111 project (B13015) to the Harbin Engineering University, and Fundamental Research Funds for the Central Universities.

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Authors and Affiliations

  1. Key Laboratory of In-fiber Integrated Optics, Ministry Education of China, Harbin Engineering University, Harbin, 150001, People’s Republic of China

    Enming Zhao, Diyou Liu, Lu Liu & Xinghua Yang

  2. College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar, 161006, People’s Republic of China

    Wei Kan

  3. HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, People’s Republic of China

    Yanmei Sun

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  1. Enming Zhao
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  2. Diyou Liu
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  3. Lu Liu
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  5. Wei Kan
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Correspondence to Enming Zhao.

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Zhao, E., Liu, D., Liu, L. et al. Unipolar nonvolatile memory devices based on the composites of poly(9-vinylcarbazole) and zinc oxide nanoparticles. J Mater Sci: Mater Electron 28, 11749–11754 (2017). https://doi.org/10.1007/s10854-017-6979-2

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