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Multi-layer of Al-doped ZnO thin film photo conductor: fabrication, dark-photo current characteristics, temperature dependent conductivity and photo response studies

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Abstract

Aluminium doped ZnO (AZO) thin films of 6–24 multilayer were deposited on glass substrates by sol–gel spin coating method using zinc acetate and aluminium nitrate as precursors. The aluminium (Al) doping concentration of 1.5 wt% was used. The effect of multilayer on the microstructure, surface morphology, optical properties, dark-photo characteristics, photo response and temperature dependent conductivity were investigated. GIXRD of the prepared films showed poly-crystalline nature with maximum orientation along (002) plane. The FE-SEM images showed spherical shaped grains of agglomerated particles up to 10 layered films. However, agglomerations did not occur after 10 layers, and clear distinct grains, formation of micro pores was observed in the 14–24 layered films. The optical absorption was dominant in the UV region, and increased with increase in the number of layers and excitonic nature, vanishing for the 24 layered film. The average transmittance in the visible region decreased, with an increase in the number of layers and a red shift was observed, indicating band gap narrowing. The dark current increased as the number of layers increased and reached a maximum for the 14 layer film and thereafter showed a decreasing trend. The presence of fewer micro pores and lesser, randomness of crystallites, could be attributed for the maximum dark current in the 14 layered film. The photo current, increased with increase in the number of layers, with 18 layer film showing maximum value and a sharp decrease for the 24 layered film. The thermal activation energy in the temperature range of 300–400 K decreased with increasing number of layers and increased for the 24 layered film. The least activation energy of 0.31 eV was obtained for the 18 layer film.

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Authors and Affiliations

  1. Department of Physics, Presidency College, Chennai, 600005, India

    T. Ganesh, M. SivaKumar & R. Mohan Kumar

  2. Department of Physics, The New College, Chennai, 600014, India

    R. Kumar

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  1. T. Ganesh
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  2. M. SivaKumar
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  3. R. Kumar
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Ganesh, T., SivaKumar, M., Kumar, R. et al. Multi-layer of Al-doped ZnO thin film photo conductor: fabrication, dark-photo current characteristics, temperature dependent conductivity and photo response studies. J Mater Sci: Mater Electron 28, 6685–6698 (2017). https://doi.org/10.1007/s10854-017-6360-5

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