Abstract
The basic understanding of nucleation kinetics is very important for any useful material. In the present investigation, the solubility of BTCI (2:1 ratio) has been determined at various temperatures. The metastable zone width and induction period values were estimated in order to optimize the growth parameters. The Nucleation parameter such as interfacial energy has been determined using the experimentally determined induction period values. Various critical nucleation parameters like Gibbs free energy, radius of critical nucleus, and nucleation rate have also been investigated. It is observed that the nucleation rate increases with the increase of supersaturation. The growth parameters of the titled materials have been optimized for the growth of bulk size single crystals of BTCI. The single crystals of thiourea cadmium iodide have been grown by slow evaporation solution technique. The DSC study reveals that the melting point and the specific heat of BTCI have been found to be ~155.25 °C and 54.319 J/g °C respectively. The mechanical study has been carried out by Vickers method. DC conductivity study indicates NTCR–type behavior in BTCI single crystal and the activation energy was found to be 0.57 eV.
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P.M. Ushasree, R. Muralidharan, R. Jayavel, P. Ramasamy, J. Cryst. Growth 218, 365–371 (2000)
M. Daniel, M.J. Mallinga, R. Sankar, D. Jayaraman, Mat. Chem. Phys. 114, 18–22 (2009)
R. HanumanthaRao, S. Kalainathan, J. Phys. Chem. Solids 73, 724–729 (2012)
P. Jeyakumari, J. Ramajothi, S. Dhanuskodi, J. Cryst. Growth 269, 558–564 (2004)
S. Selvakumar, K. Rajarajan, S.M. Ravikumar, I.V. Potheher, D.P. Anand, P. Sagayaraj, Cryst. Res. Technol. 41, 766–770 (2006)
N.P. Rajesh, V. Kannan, M. Ashok, K. Sivaji, P.S. Raghavan, P. Ramasamy, J. Cryst. Growth 262, 561–566 (2004)
S.M.R. kumar, N. Melikechi, S. Selvakumar, P. Sagyaraj, Physica B 403, 4160–4163 (2008)
V. Kannan, N.P. Rajesh, R.B. Ganesh, P. Ramasamy, J. Cryst. Growth 269, 565–569 (2004)
N. Karthick, R. Sankar, R. Jayavel, S. Pandi, J. Cryst. Growth 312, 114–119 (2009)
C. Mahadevan, G.J. Angel, V.A. Sophana, V. Umayorubhagan, Bull. Mater. Sci. 22, 817–820 (1999)
M.L. Caroline, S. Vasudevan, Mat. Chem. Phys. 113, 670–674 (2009)
C. Marcos, J.M. Alia, V. Adovasio, M. Prieto, S.G. Granda, Acta Cryst. C 54, 112–122 (1998)
M. Nardelli, L. Cavalca, A. Braibanti, Gazz. Chim. ltal. 86, 1037–1042 (1956)
R.E. Vizhi, R.A. Kumar, N. Vijayan, K. Sathiyanarayanan, D.R. Babu, Der. Pharm. Chem. 2, 261–272 (2010)
N.P. Rajesh, V. Kannan, P.S. Raghavan, P. Ramasamy, C.W. Lan, Mat. Chem. Phys. 76, 181–186 (2002)
P. Singh, M. Hasmuddin, M.M. Abdullah, M. Shkir, M.A. Wahab, Mat. Res. Bull. 48, 3926–3933 (2013)
R. Kanagadurai, R. Durairajan, R. Sankar, G. Sivanesan, S.P. Elangovan, R. Jayavel, J. Chem. 7, 137–142 (2010)
M. Hasmuddin, P. Singh, M. Shkir, M.M. Abdullah, N. Vijayan, G. Bhagavannarayana, M.A. Wahab, Spectrochim. Acta Part A Mol. Biomol. Spectrosc. 123, 376–384 (2014)
R Jeyasekaran, P.D. Christy, A. Muthuvinayagam, I. Vethapotheher, P. Sagayaraj, Arch. App. Sci. Res. 3, 83–91 (2011)
P.M. Dinakaran, S. Kalainathan, Int J. Chem. Tech. Res. 5, 262–270 (2013)
T.R. Kumar, M. Vimalan, R. Jeyasekaran, S. Tamilselvan, P. Sagayaraj, Arch. App. Sci. Res. 2, 17–24 (2010)
A.S.H. Hameed, C.W. Lan, J. Cryst. Growth 270, 475–480 (2004)
P.M. Ushasree, R. Muralidharan, R. Jayavel, P. Ramasamy, J. Cryst. Growth 210, 741–745 (2000)
A. Kandasamy, R. Mohan, M.L. Caroline, S. Vasudevan, Cryst. Res. Technol. 43, 186–192 (2008)
S.M.R. Kumar, S. Selvakumar, S. Kiruba, M. Tholkappian, P. Sagayaraj, Intern. J. Sci. Technol. 1, 51–62 (2011)
R. Sankar, C.M. Raghavan, R. Jayavel, Cryt. Res. Technol. 41, 919–924 (2006)
K. Selvarjun, K. Kirubavathi, N. Vijyan, S. Kumararaman, J. Cryst. Growth 310, 2859–2864 (2008)
L. Cunlong, Z. Zhigang, C. Weiwei, H. Zhiping, T. Xiaosheng, H. Wei, S. Kuan, L. Xianming, C. Weimin, Opt. Express 24, 15071–15078 (2016)
Z. Zhigang, T. Xiaosheng, J. Alloys Compd. 619, 98–101 (2015)
Z. Zhigang, Z. Xiaofeng, D. Jihe, W. Ming, T. Xiaosheng, Opt. Lett. 41, 3463–3466 (2016)
R. Sankar, C.M. Raghavan, R. Jayavel, Cryst. Growth Des. 7, 501–505 (2007)
V. Venkatramanan, S. Maheswaran, J.N. Sherwood, H.L. Bhatt, J. Cryst. Growth 179, 605–610 (1997)
J. Moore, M. Tomes, T. Carmon, M. Jarrahi, Appl. Phys. Lett. 99, 221111 (2011)
M.M. Abdullah, P. Singh, M. Hasmuddin, G. Bhagavannarayana, M.A. Wahab, Scripta Mater. 69, 381–384 (2013)
V. Krishnakumar, S. Kalyaranaman, M. Piasecki, I.V. Kityk, P. Bragiel, J. Raman Spectrosc. 39, 1450–1454 (2008)
S. Meenakshisundaram, S. Parthiban, G. Madhurambal, J. Therm. Anal. Calorim. 96, 77–80 (2009)
R.M. Saeed, J.P. Schlegel, C. Castano, R. Sawafta, Int. J. Eng. Res.Technol. 5, 405–412 (2016)
M. Hasmuddin, M.M. Abdullah, P. Singh, M. Shkir, N. Vijayan, M.A. Wahab, Opt Laser Technol. 74, 53–59 (2015)
S. Kalaiselvan, G. Pasupathi, B. Sakthivel, P. Philominathan, Der Pharm. Chem. 4, 1826–1832 (2012)
S. Karan, S.S. Gupta, S.P.S. Gupta, Mat. Chem. Phy. 69, 143–150 (2001)
E.M. Onitsch, Mikroskopia 2, 131–135 (1947)
C. Hays, E.G. Kendall, Metallography 6, 275–282 (1973)
N. Jain, D. Patidar, N.S. Saxena, K. Sharma, J. Inter. Pure. Appl. Phys. 44, 767–770 (2006)
S. Khan, J. Ali, Harsh, M. Husain, M. Zulfequar, Physica E 81, 320–325 (2016)
Acknowledgements
The authors are thankful to Jamia Millia Islamia, New Delhi-110025, India, for providing the facilities for the present investigation. Dr. Preeti, one of the authors, wishes to record her special thanks to UGC for providing the Post doctoral (women’s) Fellowship.
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Singh, P., Abdullah, M.M., Sagadevan, S. et al. In situ growth and physio-electrical characterization of bis-thiourea cadmium-iodide (BTCI) single crystal. J Mater Sci: Mater Electron 28, 6520–6528 (2017). https://doi.org/10.1007/s10854-017-6341-8
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DOI: https://doi.org/10.1007/s10854-017-6341-8