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Direct surface relief formation by e-beam in amorphous chalcogenide layers

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Abstract

Patterning processes in amorphous Se and \(\hbox {As}_{20}\hbox {Se}_{80}\) films at short electron beam pulses (from 200 ns to 100 ms) were studied for the first time. The surface reliefs occurring as after-pulses effects were recorded and analysed. Giant hillock formation was detected at about \(200\,\upmu \hbox {s}\) pulses while very small changes in surface morphology were observed at other pulse durations. The obtained data indicate that the strong increase in e-beam sensitivity of mechanical response (giant surface hillock formation) at about \(200\,\upmu \hbox {s}\) is due to some resonance effect. A qualitative description is given, relating these times to the characteristic generation and relaxation time of the defects in these materials, which illuminates the process of e-beam induced structural rearrangement. The measurement has been performed at room temperature and at \(-120\,^{\circ }\hbox {C}\) and only a 20% change in the maximal pattern height has been detected.

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Acknowledgements

This work was supported by the TÁMOP-4.2.2.A-11/2/KONV-2012-0032, which is co-financed by the European Union and European Social Fund.

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Authors and Affiliations

  1. Department of Solid State Physics, University of Debrecen, P. O. Box 2, Debrecen, 4010, Hungary

    C. Cserháti & L. Harasztosi

  2. Department of Experimental Physics, University of Debrecen, P. O. Box 105, 4010, Debrecen, Hungary

    I. Csarnovics & S. Kökényesi

  3. Uzhgorod National University, Narodna Sq. 3, Uzhgorod, 88000, Ukraine

    M. L. Trunov

  4. Uzhgorod Scientific-Technological Center of IIR NAS Ukraine, Zamkovi shody st. 4a, 88000, Uzhgorod, Ukraine

    M. L. Trunov

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  1. C. Cserháti
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  2. I. Csarnovics
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  3. L. Harasztosi
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  4. M. L. Trunov
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  5. S. Kökényesi
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Correspondence to C. Cserháti.

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Cserháti, C., Csarnovics, I., Harasztosi, L. et al. Direct surface relief formation by e-beam in amorphous chalcogenide layers. J Mater Sci: Mater Electron 28, 7024–7028 (2017). https://doi.org/10.1007/s10854-016-6076-y

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  • DOI: https://doi.org/10.1007/s10854-016-6076-y

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