Abstract
In this work, the performance of p–i–n hydrogenated amorphous silicon thin film solar cells by adopting n-type silicon carbide (n-SiCx:H) layer was investigated. By varying CH4/SiH4 gas flow ratio, refractive index and electrical conductivity of n-SiCx:H thin films were changed in the range of 3.4 to 3.8 and 1.48E−5 to 1.24 S/cm, respectively. Compared with solar cells with n-Si:H/Ag configuration, short-circuit current density (J sc ) of solar cells with n-SiCx:H/Ag configuration was improved up to 8.4%, which was comparable with that of solar cells with n-Si:H/ZnO/Ag configuration. Improved J sc was related with enhanced spectral response at long wavelength of 500–800 nm. It was supposed that the decreased refractive index of n-SiCx:H layer resulted in the increased back reflectance, which contributed to the improved J sc. Our experiments demonstrated that n-SiCx:H thin films were attractive choice because they functioned both as n-layer and interlayer in back reflector, and their deposition method was compatible with preparation process of solar cells.
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Acknowledgements
This work was financially supported by the National Science Foundation of China (No. 61404143), Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, and Ningbo Key Laboratory of Silicon and Organic Thin Film Optoelectronic Technologies.
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Duan, J., Wang, W., Li, H. et al. Improved short-circuit current density of a-Si:H thin film solar cells with n-type silicon carbide layer. J Mater Sci: Mater Electron 28, 3955–3961 (2017). https://doi.org/10.1007/s10854-016-6007-y
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DOI: https://doi.org/10.1007/s10854-016-6007-y