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Nanocrystalline silicon thin film prepared by e-beam evaporation for display application

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Abstract

In this paper e-beam evaporation technique is used for nc-Si film deposition rather than conventional plasma enhanced chemical vapor deposition (PECVD). In present work, the nc-Si films of different thicknesses (100, 150 and 200 nm) was deposited on Corning glass 1737 substrate using e-beam evaporation method with controlled beam current and deposition rate at moderately low temperature. The deposited nc-Si films were further characterized using FESEM, EDS, XRD, Raman Spectroscopy and AFM. The results of XRD and RAMAN confirm the nanocrystalline nature of the deposited film and the FESEM and AFM results demonstrate that the grain size increases with the increase in film thickness. To validate the feasibility of deposited film for TFT application, conductivity measurement is carried using 4-probe technique. The results indicate that e-beam evaporation is the cost effective alternative of PECVD and controlled grain size and density of nc-Si film can be easily achieved.

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References

  1. B. Rech, T. Roschek, J. Müller, S. Wieder, H. Wagner, Amorphous and microcrystalline silicon solar cells prepared at high deposition rates using RF (13.56 MHz) plasma excitation frequencies. Sol. Energy Mater. Sol. Cells 66, 267–273 (2001)

    Article  Google Scholar 

  2. A. Sobhani, N.M. Salavati, A new simple route for the preparation of nanosized copper selenides under different conditions. Ceram. Int. 40, 8173–8182 (2014)

    Article  Google Scholar 

  3. A. Sobhani, N.M. Salavati, Hydrothermal synthesis, characterization, and magnetic properties of cubic MnSe 2/Se nanocomposites material. J. Alloys Compd. 617, 93–101 (2014)

    Article  Google Scholar 

  4. A. Sobhani, N.M. Salavati, A polyethylene glycol-assisted hydrothermal synthesis of FeSe2 nanoparticles and FeSe2/FeO(OH) nanocomposites. J. Alloys Compd. 625, 26–33 (2015)

    Article  Google Scholar 

  5. A. Sobhani, N.M. Salavati, CdSe nanoparticles: facile hydrothermal synthesis, characterization and optical properties. J. Mater. Sci.: Mater. Electron. 26, 6831–6836 (2015)

    Google Scholar 

  6. A. Sobhani, N.M. Salavati, Optimized synthesis of ZnSe nanocrystals by hydrothermal method. J. Mater. Sci.: Mater. Electron. 27, 293–303 (2016)

    Google Scholar 

  7. A. Sobhani, N.M. Salavati, M. Sobhani, Synthesis, characterization and optical properties of mercury sulfides and zinc sulfides using single-source precursor. Mater. Sci. Semicond. Process. 16(2), 410–417 (2013)

    Article  Google Scholar 

  8. M. Birkholz, B. Selle, E. Conrad, K. Lips, W. Fuhs, Evolution of structure in thin microcrystalline silicon films grown by electron-cyclotron resonance chemical vapor deposition. J. Appl. Phys. 88, 4376–4379 (2000)

    Article  Google Scholar 

  9. M.K. Van Veen, C.H.M. Van Der Werf, R.E.I. Schropp, Tandem solar cells deposited using hot-wire chemical vapor deposition. J. Non-Cryst. Solids 338, 655–658 (2004)

    Article  Google Scholar 

  10. Y. Mai, S. Klein, R. Carius, H. Stiebig, L. Houben, X. Geng, F. Finger, Improvement of open circuit voltage in microcrystalline silicon solar cells using hot wire buffer layers. J. Non-Cryst. Solids 352, 1859–1862 (2006)

    Article  Google Scholar 

  11. H. Li, R.H. Franken, R.L. Stolk, C.H.M. Van der Werf, J.K. Rath, R.E.I. Schropp, Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique. J. Non-Cryst. Solids 354, 2087–2091 (2008)

    Article  Google Scholar 

  12. V. Koval, O. Bogdan, Y. Yakymenko, Study of nanocrystalline silicon thin films for application in solar cells, NANOCON2012, Brno, Czech Republic, EU, 2012, 23–25 October

  13. C.H. Cheng, P.S. Wang, C.I. Wu, G.R. Lin, Nano-crystalline silicon-based bottom gate thin-film transistor grown by LTPECVD with hydrogen-free He diluted SiH4. J. Disp. Technol. 9, 536–544 (2013)

    Article  Google Scholar 

  14. L. Teng, W.A. Anderson, Thin-film transistors on plastic and glass substrates using silicon deposited by microwave plasma ECR-CVD. IEEE Electron Device Lett. 24, 399–401 (2003)

    Article  Google Scholar 

  15. C.H. Lee, S. Andrei, N. Arokia, R. John, Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities. Appl. Phys. Lett. 89, 2101 (2006)

    Google Scholar 

  16. T. Kamei, M. Kondo, A. Matsuda, A significant reduction of impurity contents in hydrogenated microcrystalline silicon films for increased grain size and reduced defect density. Jpn. J. Appl. Phys. 37, L265–L268 (1998)

    Article  Google Scholar 

  17. W. Kern, The evolution of silicon wafer cleaning technology. J. Electrochem. Soc. 137, 1887–1892 (1990)

    Article  Google Scholar 

  18. J.I. Langford, A.J. Wilson, Scherrer after sixty years: a survey and some new results in the determination of crystallite size. J. Appl. Crystallogr. 11, 102–113 (1978)

    Article  Google Scholar 

  19. T. Okada, T. Iwaki, H. Karasawa, K. Yamamoto, Probing the crystallinity of evaporated silicon films by raman scattering. Jpn. J. Appl. Phys. 24, 161–165 (1985)

    Article  Google Scholar 

  20. J. H. Park, S. M. Han, Y. H. Choi, S. J. Kim, M. K. Han, New in-situ process of top gate nanocrystalline silicon thin film transistors fabricated at 180° C for the suppression of leakage current, in IEEE International Electron Devices Meeting, Washington, 2007, Dec 10–12, pp. 595–598

  21. R.B. Min, S. Wagner, Nanocrystalline silicon thin-film transistors with 50-nm-thick deposited channel layer, 10 cm2V−1s−1 electron mobility and 108 on/off current ratio. Appl. Phys. A. 74, 541–543 (2002)

    Article  Google Scholar 

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Acknowledgements

We would like to thank to Indian Nanoelectronics Users Program (INUP) for providing me the opportunity to doing this work in Centre of Excellence in Nanoelectronics (CEN) lab, IIT Bombay and also like to acknowledge CSIR-HRDG for providing Senior Research Fellowship (SRF) as financial support.

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Correspondence to Prachi Sharma.

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Sharma, P., Tripathi, N. & Gupta, N. Nanocrystalline silicon thin film prepared by e-beam evaporation for display application. J Mater Sci: Mater Electron 28, 3891–3896 (2017). https://doi.org/10.1007/s10854-016-6002-3

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