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Al2O3–Cu2O composite charge-trapping nonvolatile memory

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Abstract

In this work, we have fabricated and thoroughly characterized dielectric-stacked memory devices with Al2O3–Cu2O composites as the charge trapping layer which are prepared by using atomic layer deposition and RF-magnetron sputtering techniques. The devices exhibit a large memory window of 13.27 V and a density of the trapped charges of 9.37 × 1012 cm−2 at a working voltage of ±11 V. The microstructural observations by using high resolution transmission electron microscopy and the analysis on X-ray photoelectron spectroscopy indicate that the strong charge-trapping ability of Al2O3–Cu2O composite should be ascribed to the occurrence of Cu2+, resulted by the inter-diffusion at the interface of Cu2O/Al2O3. Such an interesting composite layer has very attractive application in nonvolatile memory.

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Acknowledgments

The authors are indebted to X. J. Liu, W. Lu and C. J. Gong for their kind supports with characterizations and analysis. This work was sponsored by the National Natural Science Foundation of China (NSFC) programs (61574073 and 61176124).

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Authors and Affiliations

  1. National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing, 210093, China

    Jinqiu Liu, Bo Xu, Yidong Xia, Jiang Yin & Zhiguo Liu

  2. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, China

    Jianxin Lu

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  1. Jinqiu Liu
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  2. Jianxin Lu
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Correspondence to Jiang Yin.

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Liu, J., Lu, J., Xu, B. et al. Al2O3–Cu2O composite charge-trapping nonvolatile memory. J Mater Sci: Mater Electron 28, 928–933 (2017). https://doi.org/10.1007/s10854-016-5609-8

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  • DOI: https://doi.org/10.1007/s10854-016-5609-8

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