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A novel method for the deposition of polycrystalline Sb2S3 thin films

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Abstract

Antimony sulphide (Sb2S3) semiconductor thin films are synthesized by dip technique. The film thickness is of the order of 0.62 µm. Films are found to be uniform and well adherent to the glass substrates. Characterization of the films is carried out with XRD, optical absorption, morphological, compositional and electrical measurement. X-ray diffraction pattern showed that the films were polycrystalline in nature. From optical absorption spectra the band gap is estimated to be 2.10 eV. The electrical conduction is of the order of 10−7(Ω cm)−1.

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Authors and Affiliations

  1. Department of Chemistry, J.S.M. College, Alibag, M.S., India

    P. A. Chate

  2. Department of Chemistry, KIT’s College of Engineering, Kolhapur, M.S., India

    D. J. Sathe

  3. Department of Chemistry, Bhausaheb Nene College, Pen, M.S., India

    S. D. Lakde & V. D. Bhabad

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  1. P. A. Chate
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  2. D. J. Sathe
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  3. S. D. Lakde
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  4. V. D. Bhabad
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Correspondence to P. A. Chate.

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Chate, P.A., Sathe, D.J., Lakde, S.D. et al. A novel method for the deposition of polycrystalline Sb2S3 thin films. J Mater Sci: Mater Electron 27, 12599–12603 (2016). https://doi.org/10.1007/s10854-016-5391-7

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  • DOI: https://doi.org/10.1007/s10854-016-5391-7

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