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Gamma irradiation induced modifications in spin coated CdSe thin films

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Abstract

Semiconducting nanomaterials of II–VI groups are attractive candidates for various optoelectronic applications in engineering and research due to their size dependent properties. In the present investigations, cadmium selenide nanoparticles synthesised by solvothermal route were dispersed as a thin film on glass substrate via spin coating technique. The properties of thin films exposed to 50, 100 and 150 kGy doses of gamma rays from 60Co source were characterized by XRD, SEM, EDX, UV-spectrophotometer and PL-spectrophotometer. XRD analysis confirmed the change in orientation of planes after gamma exposure. The optical studies revealed decrease in band gap from 2.17 to 2.00 eV and hence an increase in the conductivity of thin films after irradiation. The increased structural disorder and/or defects induced due to gamma irradiation might be responsible for the variation in optical band gap.

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Acknowledgments

The authors like to thanks the Director and staff at Inter University Accelerator Centre (IUAC), New Delhi, India for providing irradiation facility and their support during the irradiation experiment. Authors also acknowledge NIT Kurukshetra, India for providing SEM, XRD, UV-spectrophotometer and PL-spectrophotometer facilities and SAI Lab, Thapar University, Patiala for providing EDX facility.

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  1. Department of Physics, National Institute of Technology, Kurukshetra, Haryana, India

    Ritika Choudhary & R. P. Chauhan

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  1. Ritika Choudhary
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  2. R. P. Chauhan
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Correspondence to R. P. Chauhan.

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Choudhary, R., Chauhan, R.P. Gamma irradiation induced modifications in spin coated CdSe thin films. J Mater Sci: Mater Electron 27, 11674–11681 (2016). https://doi.org/10.1007/s10854-016-5303-x

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  • DOI: https://doi.org/10.1007/s10854-016-5303-x

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