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Microstructural, magnetic and magneto-transport properties of NiO thin film deposited on Si (100) substrates

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Abstract

NiO thin film on p- and n-type Si (100) substrates were fabricated by electron beam evaporation technique and studied by structural, morphological, magnetic and magneto-electronic transport characterization techniques. The room temperature interfacial chemistry across the interfaces is found to affect the morphology, transport and magnetic behaviour of the structures. Structural study has shown the presence of magnetic nickel silicide phases along with some metallic phases as a result of interfacial intermixing. Isolated nano-granular features of magnetic grains along with the presence of clustered grains are observed. Strong magnetic signal strength is observed for NiO/nSi structure as compared to the interface on pSi substrate which suggests the formation of more magnetic silicide phases resulting in a higher magnetization value with increased coercivity. Magnetization characteristics of the NiO thin films on Si substrates have shown a nearly superparamagnetic behaviour with weak ferromagnetic contribution as compared to bulk antiferromagnetic nature of NiO. Electronic transport study measured across NiO/nSi interface have shown the enhancement in conductivity up to 2–3 orders of magnitude than for NiO film on pSi substrate with significant magnetic field sensitivity. Magnetic field induced enhanced current has been observed for NiO/nSi structure which is related to the magnetic field response of magnetic grains (of nickel silicide phases) or isolated magnetic clusters favouring the paths for spin alignment or spin-dependent scattering resulting in a negative magnetoresistance of ~50 %.

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Acknowledgments

The authors are grateful to Prof. O. N. Srivastava (Dept. of Physics, BHU) for providing the access to XRD measurements. The authors would also like to thank Dr. Indra Sulania (Scientist, IUAC, New Delhi, India) for performing MFM/AFM measurements and to Mr. M. Siva Kumar (ACMS Building, IIT Kanpur, India) for magnetization measurements. N. Srivastava wishes to acknowledge University Grants Commission, New Delhi, India for providing the RFSMS (Research Fellowship in Science for Meritorious Students) fellowship during the research period.

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  1. Department of Physics, Banaras Hindu University, Varanasi, U.P., 221005, India

    P. C. Srivastava

  2. Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Universität Stuttgart, Allmandring 3, 70569, Stuttgart, Germany

    Neelabh Srivastava

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Srivastava, N., Srivastava, P.C. Microstructural, magnetic and magneto-transport properties of NiO thin film deposited on Si (100) substrates. J Mater Sci: Mater Electron 27, 11478–11487 (2016). https://doi.org/10.1007/s10854-016-5275-x

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