Abstract
Phosphorus-doped ZnSe nanowires were synthesized by using phosphorus (P) as dopant via thermal evaporation method. Their doping effect and obvious p-type conduction were confirmed through a top-gate MISFET based on individual P-doped ZnSeNW. Negative photoconductivity (the photocurrent was lower than the dark current) was found in p-type ZnSeNWs due to their surface effect. Two terminal devices based on p-type ZnSeNWs, as gas sensors, were also constructed and performed effective detecting behaviors to oxidizing gas. Furthermore, a complementary photodetector containing both n-type ZnSeNWs and p-type ZnSeNWs was first manufactured to eliminate the effects of crosstalk or false signal exist in conventional photodetectors. These results are expected to be used to develop new-type nano-devices and expand their applications.
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Acknowledgments
This work was supported by the National Natural Science Foundation of China (No. 51402004) and the science and technology development project of Henan province (Nos. 142102210380, 142300410366 and 15A510006).
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Zhang, X., Meng, D., Tang, Z. et al. Surface-dominated negative photoresponse of phosphorus-doped ZnSe nanowires and their detecting performance. J Mater Sci: Mater Electron 27, 11463–11469 (2016). https://doi.org/10.1007/s10854-016-5273-z
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DOI: https://doi.org/10.1007/s10854-016-5273-z