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Influence of total gas partial pressure on the structural formation of SiC thin films deposited by HWCVD technique

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Abstract

Silicon carbide (SiC) thin films were prepared at low temperature using the hot wire chemical vapor deposition from SiH4 and CH4 gases. The SiH4 to CH4 flow rate ratio was kept constant at 0.05 and the effects of total gas partial pressure and the deposition pressure on the structural and compositional properties of the SiC thin films were investigated. The deposition rate of the films increased with the increase in total gas partial pressure but decreased with the increase in deposition pressure. Fourier transforms infrared spectra and X-ray diffraction revealed the formation of nanocrystalline SiC at low total gas partial pressure and high deposition pressure. Only Si-rich amorphous SiC was grown at higher total gas partial pressure as verified by Raman scattering spectroscopy.

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References

  1. Y. Hamakawa, Mater. Res. Soc. Symp. Proc. 164, 291 (1989)

    Article  Google Scholar 

  2. A.M. Rinaldi, D. Crippa, in Silicon Epitaxy, ed by D. Crippa, D.L. Rode, M. Masi (Academic Press, San Diego, USA, 2001)

  3. W. Ma et al., Microcrystalline silicon carbide—new useful material for improvement of solar cell performance. Sol. Energy Mater. Sol. Cells 34(1), 401–407 (1994)

    Article  Google Scholar 

  4. Z. Gong et al., Influence of deposition condition and hydrogen on amorphous-to-polycrystalline SiCN films. Thin Solid Films 348(1–2), 114–121 (1999)

    Article  Google Scholar 

  5. D.K. Basa, Optical bandgap and quantum well model in hydrogenated amorphous silicon carbon alloy films. Phys. Status Solidi (a) 195(1), 87–92 (2003)

    Article  Google Scholar 

  6. G. Soto, E.C. Samano, R. Machorro, L. Cota, J. Vac. Sci. Technol. A 16, 1311 (1998)

    Article  Google Scholar 

  7. Z. He, G. Carter, J.S. Colligon, Ion-assisted deposition of C–N and Si–C–N films. Thin Solid Films 283(1–2), 90–96 (1996)

    Article  Google Scholar 

  8. H. Matsumura, Formation of silicon-based thin films prepared by catalytic chemical vapor deposition (Cat-CVD) method. Jpn. J. Appl. Phys. 37, 3175 (1998)

    Article  Google Scholar 

  9. A. Tabata, M. Kuroda, M. Mori, T. Mizutani, Y. Suzuoki, Band gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition. J. Non-Cryst. Solids 338–340, 521–524 (2004)

    Article  Google Scholar 

  10. A. Dasgupta et al., Effect of filament and substrate temperatures on the structural and electrical properties of SiC thin films grown by the HWCVD technique. Thin Solid Films 516(5), 622–625 (2008)

    Article  Google Scholar 

  11. B.P. Swain et al., Effect of H2 dilution on Cat-CVD a-SiC: H films. Thin Solid Films 501(1–2), 173–176 (2006)

    Article  Google Scholar 

  12. Y. Komura, A. Tabata, T. Narita, A. Kondo, Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system. Thin Solid Films 516(5), 633–636 (2008)

    Article  Google Scholar 

  13. F.S. Tehrani et al., Pressure dependent structural and optical properties of silicon carbide thin films deposited by hot wire chemical vapor deposition from pure silane and methane gases. J. Mater. Sci. Mater. Electron. 24(4), 1361–1368 (2012)

    Article  Google Scholar 

  14. A. Tabata, M. Mori, Structural changes of hot-wire CVD silicon carbide thin films induced by gas flow rates. Thin Solid Films 516(5), 626–629 (2008)

    Article  Google Scholar 

  15. F.S. Tehrani et al., Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4. Vacuum 86(8), 1150–1154 (2012)

    Article  Google Scholar 

  16. F.S. Tehrani, Transformation from amorphous to nano-crystalline SiC thin films prepared by HWCVD technique without hydrogen dilution. Bull. Mater. Sci. 38(5), 1333–1338 (2015)

    Article  Google Scholar 

  17. A. Tabata, Y. Komura, Preparation of nanocrystalline cubic silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances. Surf Coat Technol 201(22–23), 8986–8990 (2007)

    Article  Google Scholar 

  18. F.S. Tehrani, S.A. Rahman, Influence of filament-to-substrate distance on the spectroscopic, structural and optical properties of silicon carbide thin films deposited by HWCVD technique. J. Mater. Sci. Mater. Electron. 25(5), 2366–2373 (2014)

    Article  Google Scholar 

  19. Z. Liu et al., Low-temperature formation of nanocrystalline β-SiC with high surface area and mesoporosity via reaction of mesoporous carbon and silicon powder. Microporous Mesoporous Mater. 82(1), 137–145 (2005)

    Article  Google Scholar 

  20. R. Ritikos et al., Highly reflective nc-Si:H/a-CNx: H multilayer films prepared by r.f. PECVD technique. Thin Solid Films 517(17), 5092–5095 (2009)

    Article  Google Scholar 

  21. D. Basa, G. Ambrosone, U. Coscia, Microcrystalline to nanocrystalline silicon phase transition in hydrogenated silicon? Carbon alloy films. Nanotechnology 19(41), 415706 (2008)

    Article  Google Scholar 

  22. R.E.I. Schropp et al., Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition. Philos. Mag. Part B 76(3), 309–321 (1997)

    Article  Google Scholar 

  23. N. Lin et al., Preparation of nanocrystalline silicon from SiCl4 at 200 °C in molten salt for high-performance anodes for lithium ion batteries. Angew. Chem. Int. Ed. 54(12), 3822–3825 (2015)

    Article  Google Scholar 

  24. M. Hernandez et al., Study of surface defects on 3C–SiC films grown on Si (111) by CVD. J. Cryst. Growth 253(1), 95–101 (2003)

    Article  Google Scholar 

  25. A. Gallagher, Some physics and chemistry of hot-wire deposition. Thin Solid Films 395, 25–28 (2001)

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. Department of Physics, Semnan University, Semnan, 35195-363, Iran

    F. Shariatmadar Tehrani

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  1. F. Shariatmadar Tehrani
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Shariatmadar Tehrani, F. Influence of total gas partial pressure on the structural formation of SiC thin films deposited by HWCVD technique. J Mater Sci: Mater Electron 27, 11457–11462 (2016). https://doi.org/10.1007/s10854-016-5272-0

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  • DOI: https://doi.org/10.1007/s10854-016-5272-0

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