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An analytical model of low field and high field electron mobility in wurtzite indium nitride

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Abstract

This paper presents a theoretical analysis of transport properties and develops a low filed and high field electron analytical mobility model for wurtzite indium nitride (WZ InN) by Monte Carlo method. An nonparabolic electronic structure model was used in the ensemble Monte Carlo simulation, which includes all the major scattering mechanisms. The steady state velocity field curves and low field mobilities are calculated in detail as the functions of temperature, doping concentration and electric field. To avoid the effect of thermal motion at low field, the diffusion coefficient for InN is firstly obtained by autocorrelation function method, which is calculated by velocity fluctuation. The accurate low field mobility is deduced by Einstein equation. Finally, both the analytical low field and high field can be obtained by least squares fitting method, which can be employed in the simulation of InN devices.

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Acknowledgments

This work was supported in part by the Project of National Natural Science Foundation of China (Grant Nos. 61504100 and 61376099), in part by Specialized Research Fund for the Doctoral Program of High Education (No. 2015M582612).

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Authors and Affiliations

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China

    Shulong Wang, Hongxia Liu, Qing Chen & Hailin Zhang

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  1. Shulong Wang
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  2. Hongxia Liu
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Correspondence to Hongxia Liu.

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Wang, S., Liu, H., Chen, Q. et al. An analytical model of low field and high field electron mobility in wurtzite indium nitride. J Mater Sci: Mater Electron 27, 11353–11357 (2016). https://doi.org/10.1007/s10854-016-5259-x

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  • DOI: https://doi.org/10.1007/s10854-016-5259-x

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