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The effect of postdeposition annealing on the structural and optoelectronic properties of copper bismuth selenide thin films by PVD

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Abstract

Copper bismuth selenide thin films were deposited on to the glass substrate by thermal evaporation method. The films were annealed at 200 °C for various time duration (1, 2, 3 and 4 h) and studied the structural and opto-electrical physical properties of the films. Structural studies showed that the as-deposited film was amorphous in nature while crystalline peaks emerging in the annealed films and its intensity increase with the increase of annealing time. Crystallite size is found to be increased with increase in annealing duration which shows the enhance in crystallinity. All films shows optical absorption in the visible region and it increases for increase in annealing duration. The absorption coefficient is found to be about 104 cm−1. The bandgap energy is found to be in the range of 1.99–1.67 eV. The electrical resistivity of the films was found in the range of 2.58 × 102 to 0.470 Ωm.

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Acknowledgements

The authors gratefully thank the UGC-BSR, New Delhi for providing fellowship, DST-FIST and UGC-SAP, New Delhi for providing financial support to Department of Physics, ManonmaniamSundaranar University, Tirunelveli-12, Tamilnadu, India.

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Authors and Affiliations

  1. Department of Physics, Manonmaniam Sundaranar University, Tirunelveli, Tamilnadu, 627 012, India

    Abirami Muthukannan, J. Henry & K. Mohanraj

  2. CISL, Department of Physics, Annamalai University, Annamalai Nagar, Chidambaram, Tamilnadu, 608 002, India

    G. Sivakumar

  3. Centre for Scientific and Applied Research, School of Basic Engineering and Sciences, PSN College of Engineering and Technology, Tirunelveli, Tamilnadu, 627 152, India

    S. Thanikaikarasan

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  1. Abirami Muthukannan
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  2. J. Henry
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  3. K. Mohanraj
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  4. G. Sivakumar
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  5. S. Thanikaikarasan
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Correspondence to K. Mohanraj.

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Muthukannan, A., Henry, J., Mohanraj, K. et al. The effect of postdeposition annealing on the structural and optoelectronic properties of copper bismuth selenide thin films by PVD. J Mater Sci: Mater Electron 27, 9947–9952 (2016). https://doi.org/10.1007/s10854-016-5065-5

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  • DOI: https://doi.org/10.1007/s10854-016-5065-5

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