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Effect of electric field direction and substrate roughness on three-dimensional self-assembly growth of copper oxide nanowires

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Abstract

This paper analyses the three-dimensional (3-D) surface texture of Copper oxide nanowires grown on different substrates and in an electric field. Atomic force microscopy, X-ray diffraction and field emission scanning electron microscopy analyses were applied also to characterize the 3-D surface texture data in connection with the statistical, and fractal analyses. This type of 3-D morphology allows a deeper understanding of structure/property relationships and studies the effect of micromorphology on CuO nanowires grown in electric field and the impact of growth direction on their properties. It also provides a compact representation of complex micromorphology information.

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Authors and Affiliations

  1. Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, Faculty of Mechanical Engineering, Technical University of Cluj-Napoca, 103-105 B-dul Muncii St., 400641, Cluj-Napoca, Cluj, Romania

    Ştefan Ţălu

  2. Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran

    Shahram Solaymani & Atefeh Ghaderi

  3. Faculty of Technical Sciences, University of Warmia and Mazury in Olsztyn, Oczapowskiego 11, 10-719, Olsztyn, Poland

    Miroslaw Bramowicz

  4. Faculty of Mathematics and Computer Science, University of Warmia and Mazury in Olsztyn, Sloneczna 54, 10-710, Olsztyn, Poland

    Slawomir Kulesza

  5. Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran

    Samaneh Shahpouri & Seyed Mohammad Elahi

Authors
  1. Ştefan Ţălu
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  2. Shahram Solaymani
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  4. Slawomir Kulesza
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Correspondence to Atefeh Ghaderi.

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Ţălu, Ş., Solaymani, S., Bramowicz, M. et al. Effect of electric field direction and substrate roughness on three-dimensional self-assembly growth of copper oxide nanowires. J Mater Sci: Mater Electron 27, 9272–9277 (2016). https://doi.org/10.1007/s10854-016-4965-8

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  • DOI: https://doi.org/10.1007/s10854-016-4965-8

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