Effect of Ti doping on the structural, electrical and magnetic properties of GaFeO3

Abstract

Polycrystalline GaFe1−xTixO3 (x = 0, 0.05, 0.10, 0.15) samples were synthesized by solid state reaction. The effect of substitution of Ti at the Fe site on the structural parameters, dielectric and magnetic was studied. The monophasic compounds crystallized in the orthorhombic space group pc21n and the unit cell volume decreases with increasing Ti content. The dielectric constant has increased while the dielectric loss has decreased at higher temperature as compared to parent compound GaFeO3 after doping Ti ions at the Fe site. Doping of Ti has also decreased the ferrimagnetism.

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Sen, S., Chakraborty, N., Rana, P. et al. Effect of Ti doping on the structural, electrical and magnetic properties of GaFeO3 . J Mater Sci: Mater Electron 27, 4647–4652 (2016). https://doi.org/10.1007/s10854-016-4342-7

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Keywords

  • Dielectric Loss
  • BiFeO3
  • Remnant Magnetization
  • Gallium Oxide
  • Appreciable Research