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Organometallic hybrid perovskites: structural, optical characteristic and application in Schottky diode

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Abstract

CH3NH3PbI3 thin film was deposited by a dual-source evaporation system under high vacuum (~10−4 Pa). The crystallographic phase of the thin film was determined by X-ray diffraction and its perovskite structure was confirmed. The crystal of annealed perovskite film was extremely smooth and significantly larger than that of as-deposited. The optical property of the thin film was investigated in the spectral range 300–1800 nm. By analyzing the absorption coefficient (α), the optical band gap (1.58 eV) and Urbach energy (0.082 eV) were revealed. The Al/CH3NH3PbI3/ITO Schottky diode was fabricated in order to explore the potential applications of CH3NH3PbI3. The basic device parameters, barrier height and ideality factor were determined by the current–voltage (I–V) measurement. It can be found that the charge transport was governed by space-charge-limited current mechanism by studying the forward bias characteristic.

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Acknowledgments

This work was supported by Funding for the development project of Beijing Municipal Education Commission of science and technology (Grant No. KZ201410005008), Natural Science Foundation of Beijing City (No. 4102014), and China Postdoctoral Science Foundation (No. 2015M570020).

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Authors and Affiliations

  1. College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China

    Liang Chen, Jinxiang Deng, Hongli Gao, Qianqian Yang, Guisheng Wang, Le Kong, Min Cui & Zijia Zhang

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  1. Liang Chen
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  2. Jinxiang Deng
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Correspondence to Jinxiang Deng.

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Chen, L., Deng, J., Gao, H. et al. Organometallic hybrid perovskites: structural, optical characteristic and application in Schottky diode. J Mater Sci: Mater Electron 27, 4275–4280 (2016). https://doi.org/10.1007/s10854-016-4293-z

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