Abstract
The dielectric properties of Zn2SnO4 thin films were investigated. Zn2SnO4 thin films were prepared using the radio frequency magnetron sputtering with various depositing times. The X-ray diffraction patterns of the Zn2SnO4 thin films revealed that Zn2SnO4 is the main crystalline phase, which is accompanied by a little SnO2 as the second phase. The average grain size of the Zn2SnO4 thin films in the range from 12.3 to 14.2 nm as the depositing time varied from 60 to 120 min. Dielectric constants (\(\varepsilon_{r}\)) of 19–75 and loss factor of 0.10–0.19 of Zn2SnO4 thin films were measured at 1 MHz with depositing times in the range of 60–120 min.
Similar content being viewed by others
References
Y.C. Chen, C.W. Wang, K.H. Chen, Y.D. Huang, Y.C. Chen, Jpn. J. Appl. Phys. 47, 992 (2008)
M. Guo, Y. Li, G. Dou, S. Gong, Mater. Chem. Phys. 147, 728 (2014)
L. Pereira, P. Barquinha, G. Goncalves, A. Vila, A. Olziersky, J. Morante, E. Fortunato, R. Martins, Phys. Status Soildi A 206, 2149 (2009)
Z.L. Pei, L. Pereira, G. Goncalves, P. Barquinha, N. Franco, E. Alves, A.M.B. Rego, R. Martins, E. Fortunatoa, Electrochem. Solid-State Lett. 12, 65 (2009)
Y.C. Chen, Y.N. Wang, C.H. Hsu, J. Alloys Compd. 509, 9650 (2011)
R.C. Pullar, J.D. Breeze, N. McN Alford, Key Eng. Mater. 224, 1 (2002)
S.D. Ramarao, V.R.K. Murthy, Scr. Mater. 69, 274 (2013)
Y.C. Chen, H.M. You, Mater. Chem. Phys. 154, 94 (2015)
Y.C. Chen, M.Z. Weng, J.M. Hong, J. Mater. Sci.: Mater. Electron. 25, 5000 (2014)
Y.C. Chen, C.F. Su, M.Z. Weng, J. Mater. Sci.: Mater. Electron. 25, 2120 (2014)
P. Klung, L.E. Alexander (ed.), in X-ray Diffraction Procedures: For Polycrystalline and Amorphous Materials, 2nd edn. (Wiley, New York, 1974), p. 687
S. Mehraj, M.S. Ansari, Alimuddin, Thin Solid Films 589, 57 (2015)
Acknowledgments
The authors would like to thank the Ministry of Science and Technology in Taiwan, for financially supporting this research under Contract No. MOST 104-2212-E-262-002.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Chen, YC., You, HM. Microstructures and dielectric properties of inverse-spinel structure Zn2SnO4 thin films by RF magnetron sputtering. J Mater Sci: Mater Electron 27, 2031–2035 (2016). https://doi.org/10.1007/s10854-015-3987-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-015-3987-y