Abstract
In this paper, effect of selenization temperature on the crystalline and electrical properties of Cu2SnSe3 (CTSe) thin films obtained from rapid thermal processing (RTP) has been studied. X-ray diffraction and scanning electron microscope results indicated that the crystallinity of CTSe thin film is improved with the increase of selenization temperature. X-ray diffraction and Raman analysis revealed that the CTSe thin films without secondary phase were obtained at a growth temperature above 600 °C. A decrease of the element Tin (Sn) in the RTP process is observed as substrate temperature is increased from 550 to 700 °C. The band gap the CTSe thin films is between 0.87 and 0.91 eV distinguished by the selenization temperature. The CTSe thin films showed p-type conductivity with carrier concentrations of 1017–1021 cm−3. Hole mobility of the CTSe thin films were found to range between 4.48 and 23.6 cm2 V−1 s−1. Electrical properties improved significantly because of the RTP temperature increased.
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This work was supported by National Basic Research Program of China (973 Program)-2012CB922001.
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Ma, T., Yuan, C., Jiang, G. et al. Effect of selenization temperature on the crystalline and electrical properties of Cu2SnSe3 thin films obtained from rapid thermal process. J Mater Sci: Mater Electron 26, 8760–8764 (2015). https://doi.org/10.1007/s10854-015-3554-6
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DOI: https://doi.org/10.1007/s10854-015-3554-6