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Influence of Mo doping on transparent conducting properties of ZnO films prepared by a simplified spray technique

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Abstract

Molybdenum doped zinc oxide films were prepared by simplified spray pyrolysis method at a deposition temperature of 350 °C. Mo doping level in ZnO films were varied from 1 to 4 at.%. X-ray diffraction results reveal that all the films exhibit hexagonal wurtzite structure with preferential orientation along the (002) plane. The crystallite size is found to be varied from 29 to 59 nm with the increase in the Mo content. The film with 1 at.% Mo doping has good electrical properties among all doped samples in terms of the carrier concentration (7.5 × 1019 cm−3), charge carrier mobility (18.2 cm2 V−1 s−1), and a minimum resistivity (2.0 × 10−3 Ω cm). UV–Vis spectrometer results show that all the films are highly transparent in the visible region and the band gap energy of the films varies from 3.19 to 3.14 eV as Mo doping level is increased.

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Acknowledgments

Financial support from the Council of Scientific and Industrial Research (CSIR), India, through the Research Scheme (03(1321)/14/EMR-II) is gratefully acknowledged.

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Authors and Affiliations

  1. Post Graduate and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur, 613 503, Tamil Nadu, India

    K. Ravichandran, A. Anbazhagan & N. Dineshbabu

  2. Post Graduate and Research Department of Physics, Bishop Heber College (Autonomous), Tiruchirappalli, 620 017, Tamil Nadu, India

    C. Ravidhas

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  1. K. Ravichandran
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  2. A. Anbazhagan
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  3. N. Dineshbabu
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  4. C. Ravidhas
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Correspondence to K. Ravichandran.

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Ravichandran, K., Anbazhagan, A., Dineshbabu, N. et al. Influence of Mo doping on transparent conducting properties of ZnO films prepared by a simplified spray technique. J Mater Sci: Mater Electron 26, 7649–7654 (2015). https://doi.org/10.1007/s10854-015-3404-6

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  • DOI: https://doi.org/10.1007/s10854-015-3404-6

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