Abstract
This study reports the improved performance of quantum dot-sensitized solar cells by inserting ZnS layer between the TiO2 film and CdS/CdSe quantum dots. An energy conversion efficiency of 2.84 % was attained. The enhancement introduced by inserting ZnS in moderation was attributed to the promoted nucleation of CdS QDs and enhanced light harvesting, as well as the improved electron transport at the interface in the photoanode.
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Acknowledgments
The research was supported by the Grant Nos. 61106127 and 51472034 from the National Natural Science Foundation of China, No. 2013CFA088 from the Science Foundation of Educational Commission of Hubei Province of China.
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Deng, F., Mei, X., Wan, X. et al. Efficiency improvement of quantum dot sensitized solar cells with inserting ZnS layer in the photoanode. J Mater Sci: Mater Electron 26, 7635–7638 (2015). https://doi.org/10.1007/s10854-015-3402-8
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DOI: https://doi.org/10.1007/s10854-015-3402-8