Abstract
Pure BiFeO3 (BFO) and Bi1−xDyxFeO3 (BDxFO, x = 0.06–0.12) thin films were successfully deposited on fluorine-doped SnO2 (FTO/glass) substrates by using a chemical solution deposition method. The microstructure, electric property and magnetic property of the Bi1−xDyxFeO3 thin films were studied. And the conduction mechanism of the Bi0.90Dy0.10FeO3 thin film was analyzed. The results show that a structural transition from the trigonal structure (R3c: H) to the trigonal structure (R3m: R) was observed in the Bi1−xDyxFeO3 thin films. The dielectric property of the Bi0.90Dy0.10FeO3 thin film has been improved, its dielectric constant at 1 kHz is 266. Furthermore, the Bi0.90Dy0.10FeO3 thin film shows a relatively low leakage current density of 9.04 × 10−3 A/cm2 at the applied electric field of 250 kV/cm. The interface-limited Fowler–Nordheim tunneling dominates the leakage current of the Bi0.90Dy0.10FeO3 thin film at the higher applied electric field. The enhanced magnetic property was observed in the Bi1−xDyxFeO3 thin films, which can be attributed to the structural transition and small grain sizes.
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Acknowledgments
This work is supported by the Project of the National Natural Science Foundation of China (Grant No. 51372145), the Academic Leaders Funding Scheme of Shaanxi University of Science and Technology (2013XSD06), Doctorate Scientific Research Initial Fund Program of Shaanxi University of Science and Technology (BJ4-13), and the Graduate Innovation Fund of Shaanxi University of Science and Technology (SUST-A04).
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Yan, X., Tan, G., Liu, W. et al. Studies on structural, electrical and magnetic properties of Dy-doped BiFeO3 thin films. J Mater Sci: Mater Electron 26, 6232–6239 (2015). https://doi.org/10.1007/s10854-015-3208-8
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DOI: https://doi.org/10.1007/s10854-015-3208-8