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Signature of antiferromagnetism in entropy maximized charge density distribution of melt grown diluted magnetic semiconductor Ge1−xVx

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Abstract

Diluted magnetic semiconductor Ge1−xVx with three different dopant concentrations x = 0.03, 0.06 and 0.09 has been grown using melt growth technique. Scanning electron microscopy was used to analyze the surface morphological nature of the samples. Magnetic measurements taken using vibrating sample magnetometer reveal the diamagnetic nature for x = 0.03 and antiferromagnetic for x = 0.06 and 0.09. Powder X-ray diffraction data sets were collected for the samples and the structure was analysed using profile refinement technique and charge density was analysed using the versatile statistical tool maximum entropy method. Charge density analysis reveals that when x = 0.06 and 0.09 the system exhibits covalent bonding and picturises the signature of antiferromagnetism. The local structure was analyzed using pair distribution function technique.

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Acknowledgments

We thank the Council of Scientific and Industrial Research (CSIR) for its financial assistance to the research Project No. 03(1138)/09/EMR-II. We thank the authorities of The Madura College, Madurai, for their support. We acknowledge National Institute for Interdisciplinary Science & Technology (NIIST), Trivandrum, for their help in the collection of X-ray diffraction data. We acknowledge Central Instrumentation Facility, Pondicherry University, Pondicherry, for their help in the magnetic measurements using VSM.

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Authors and Affiliations

  1. Research Centre and PG Department of Physics, The Madura College, Madurai, 625 011, India

    R. A. J. R. Sheeba & R. Saravanan

  2. Electropyrometallurgy Division, CECRI, Karaikudi, 630 006, India

    L. J. Berchmans

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  1. R. A. J. R. Sheeba
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  2. R. Saravanan
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  3. L. J. Berchmans
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Correspondence to R. A. J. R. Sheeba.

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Sheeba, R.A.J.R., Saravanan, R. & Berchmans, L.J. Signature of antiferromagnetism in entropy maximized charge density distribution of melt grown diluted magnetic semiconductor Ge1−xVx . J Mater Sci: Mater Electron 26, 3772–3780 (2015). https://doi.org/10.1007/s10854-015-2901-y

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