Advertisement

Improving quality factor of Nd2MoO6 ceramics by removing moisture content

  • Yih-Chien ChenEmail author
  • Min-Zhe Weng
Article

Abstract

The effect of removing moisture content in starting raw materials on the microwave dielectric properties of Nd2MoO6 ceramics was investigated. The Nd2MoO6 ceramics were prepared by the conventional solid-state method with various sintering temperatures and sintering times. A maximum density of 6.08 g/cm3 was obtained for Nd2MoO6 ceramic, sintered at 1350 °C for 4 h. Dielectric constants (ɛ r ) of 13.6–13.8 and quality factor (Q × f) of 18,400–66,400 GHz were obtained at sintering temperatures in the range 1250–1400 °C for 4 h. Dielectric constants (ɛ r ) of 13.5–13.8 and quality factor (Q × f) of 44,000–66,400 GHz were obtained for sintering times in the range 2–6 h at a sintering temperature of 1350 °C. A dielectric constant (ɛ r ) of 13.8, a quality factor (Q × f) of 66,400 GHz, and a temperature coefficient of resonant frequency (τ f ) of −53 ppm/°C were obtained when Nd2MoO6 ceramics were sintered at 1350 °C for 4 h.

Keywords

Dielectric Constant Resonant Frequency Quality Factor Sinter Temperature Temperature Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

The authors would like to thank the Ministry of Science and Technology in Taiwan for financially supporting this research under Contract No. MOST 103-2622-E-262-009-CC3.

References

  1. 1.
    Y.C. Chen, M.Z. Weng, K.C. Chang, J. Mater. Sci. Mater. Electron. 25, 2475–2481 (2014)CrossRefGoogle Scholar
  2. 2.
    Y.C. Chen, M.Z. Weng, K.C. Chang, J. Mater. Sci. Mater. Electron. 25, 844–851 (2014)CrossRefGoogle Scholar
  3. 3.
    Y.C. Chen, C.H. Li, J. Mater. Sci. Mater. Electron. doi: 10.1007/s10854-014-2167-9
  4. 4.
    F. De Smet, M. Devillers, C. Poleunis, P. Bertrand, J. Chem. Soc. Faraday Trans. 94, 941–947 (1998)CrossRefGoogle Scholar
  5. 5.
    F. De Smet, P. Ruiz, B. Delmon, M. Devillers, J. Phys. Chem. B 105, 12355 (2001)CrossRefGoogle Scholar
  6. 6.
    Y.C. Chen, M.Z. Weng, J. Mater. Sci. Mater. Electron. doi: 10.1007/s10854-014-2474-1
  7. 7.
    B.W. Hakki, P.D. Coleman, IEEE Trans. Microw. Theory Tech. 8, 402–410 (1960)CrossRefGoogle Scholar
  8. 8.
    Y. Kobayashi, M. Katoh, IEEE Trans. Microw. Theory Tech. 33, 586–592 (1985)CrossRefGoogle Scholar
  9. 9.
    B.D. Silverman, Phys. Rev. 125, 1921–1930 (1962)CrossRefGoogle Scholar
  10. 10.
    W.S. Kim, T.H. Hong, E.S. Kim, K.H. Yoon, Jpn. J. Appl. Phys. 37, 3567–3571 (1998)Google Scholar

Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.Department of Electrical EngineeringLunghua University of Science and TechnologyGueishan District, Taoyuan CityTaiwan

Personalised recommendations