Abstract
The NiSix film was deposited onto the quartz substrates by the direct current pulsed magnetron sputtering technique. With the increase of annealing temperature from 100 to 800 °C in air, the NiSix films with different properties were obtained. The characterization by Hall effect system showed that the electrical property of NiSix film was abrupltly deteriorated at the annealing temperature over 500 °C in air. The characterization by X-ray diffraction (XRD) system showed that the oxidation of Ni in NiSix film started and completed at the temperature of 400 and 600 °C in air, respectively. The scanning electron microscopy resuls showed that the oxidation of NiSix film started at the pin-holes/defects on film surface, and then diffused to the whole film. In order to avoid the oxidation of NiSix film at high temperature in air, the SiOxNy film was deposited onto the NiSix film by the same technique. The XRD results showed that the dense SiOxNy film could prevent the NiSix film from the oxidation at temperature of 800 °C in air. With the SiOxNy film, the NiCrx–NiSix film thermocouple could normally service at temperature of 800 °C in air.
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Acknowledgments
This work was supported by the National Natural Science Foundation of China (Nos. 51472039, 51102030), Project of Education Department of Liaoning Province, China (No. L2013184), Natural Science Foundation of Liaoning Province, China (No. 201202024), Science and technology projects of Liaoning Province, China (No. 2012220007), Dalian Science and Technology Plan Project, China (No. 2012A12GX017), and Project of Open Research Foundation of State Key Laboratory of Advanced Technology for Float Glass (No. KF1301-01).
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Zhang, Q., Liu, J., Cui, Y. et al. The oxidation process of NiSix film at high temperature in air and the antioxidant effect of SiOxNy/NiSix film. J Mater Sci: Mater Electron 26, 3291–3298 (2015). https://doi.org/10.1007/s10854-015-2830-9
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DOI: https://doi.org/10.1007/s10854-015-2830-9